A star-shaped heat transfer medium channel structure of a semiconductor equipment temperature control spray device
A technology of heat transfer medium and spraying device, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., which can solve the problems of unsuitable burying, large size of spraying parts, and low heat transfer efficiency, and achieve the main body Reduced thickness and simple structure
Active Publication Date: 2017-10-03
PIOTECH CO LTD
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Problems solved by technology
[0003] The purpose of the present invention is to solve the above-mentioned problems, and mainly solve the problem of the side of the small spray holes existing in the structure of the existing spray assembly, that is, the side closest to the heat source, which restricts the heat transfer due to the dense arrangement of small spray holes in equilateral triangles. Due to the space required for the medium channel, the heat transfer medium channel can only be set above the spray part or in the upper connection part of the spray part, resulting in low heat transfer efficiency, large spray part size, and other problems that should not be buried in the spray part. The problem of heat transfer medium pipeline of material
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[0013] refer to Figure 3-Figure 4 , the star-shaped heat transfer medium channel structure is composed of deep blind hole drilling, through hole drilling and plugging for a single part, and the drilling depth of small spray holes 3 in an equilateral triangular array is avoided from the edge of the spray orifice plate 2 to its center. Blind hole A5, on the edge of the spray orifice plate 2 toward its center, avoid the small spray hole 3 of the equilateral triangle array and drill the deep blind hole B6 intersecting with the deep blind hole A5, because the array of the small spray hole 3 It is an equilateral triangle array, so the included angle between the deep blind hole A5 and the deep blind hole B6 at the center of the spray orifice plate 2 is 60°. In the same way as the relative position of deep blind hole A5 and deep blind hole B6, open deep blind hole C7 and deep blind hole D10, deep blind hole E11 and deep blind hole F13, deep blind hole G14 and deep blind hole H16, dee...
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A star-shaped heat transfer medium channel structure of a temperature control spray device for semiconductor equipment mainly solves the problems of limited space required for the heat transfer medium channel, low heat transfer efficiency, and large volume of spraying parts in the prior art. It includes the upper part of the spray device and the spray orifice. Its structure is mainly formed by deep blind hole drilling and through hole drilling and welding plugging. The air intake part is brazed concentrically to the top of the spray orifice plate, and two inlets and outlets for the heat transfer medium are drilled on the upper end of the air intake part to communicate with the star-shaped heat transfer medium channel, so that the star-shaped heat transfer medium channel forms a sealed loop. The present invention adopts the form of deep blind hole drilling and through hole drilling and welding plugging on the spray orifice plate to form a star-shaped heat transfer medium channel in the gap of the spray small holes in the dense equilateral triangular array, avoiding complicated The heat transfer medium channel is formed by combining multiple parts such as friction welding and fiber welding. The invention has a simple structure, and the heat transfer channel is evenly distributed in the small spray holes of the entire spray device, and turns back multiple times, the heat transfer area is increased to increase the heat transfer efficiency, and the thickness of the main body of the spray device is reduced.
Description
technical field [0001] The invention relates to a spraying device used in semiconductor thin film deposition equipment. In the spraying device, the temperature control of the spraying device is realized through the heat transfer medium channel arranged inside the spraying device, so as to meet the requirements of the reaction gas before entering the reaction chamber. The invention relates to the process requirement of film deposition with controllable temperature or controllable temperature of spray device body, which belongs to the technical field of semiconductor film deposition application and manufacture. Background technique [0002] Existing semiconductor thin film deposition equipment, in the process, often requires the reaction gas to pass into the chamber in a specific temperature field for reaction, or, due to the heater that heats the wafer or other forms of film carrier during the process The temperature is high, and the heat radiation acts on the spray device to...
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IPC IPC(8): C23C16/455
Inventor 吕光泉吴凤丽苏欣
Owner PIOTECH CO LTD