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rs flip-flop based on silicon-based low-leakage cantilever floating gate

A cantilever beam and floating gate technology, applied in electrical pulse generator circuits, electrical components, and electrical pulse generation, etc., can solve the problems of device stability degradation, leakage, excessive power consumption, etc. Small gate leakage current, effect of reducing DC power consumption

Active Publication Date: 2017-05-31
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The simplest RS flip-flop can be obtained by cross-connecting the input and output of two NAND gates, which has two input terminals R and S and two output terminals Q and The most important structure of this basic RS flip-flop is the MOS switch tube. MOS devices have many advantages. It is not uncommon for the stability of the device to decrease or even the function to fail due to excessive power consumption. Therefore, how to reduce the power consumption of the RS flip-flop is a problem that people must solve.
[0003] As the scale of integrated circuits continues to increase, and the frequency is getting higher and higher, traditional MOS devices can no longer meet the growing needs of people, but with the further development of MEMS technology, a MEMS cantilever beam floating gate structure The new MOS device effectively solves the problems of traditional MOS devices in terms of leakage and power consumption. The present invention designs a RS flip-flop with a cantilever beam grid with extremely small gate leakage current on the Si substrate.

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  • rs flip-flop based on silicon-based low-leakage cantilever floating gate
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  • rs flip-flop based on silicon-based low-leakage cantilever floating gate

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Embodiment Construction

[0016] The RS flip-flop of the silicon-based low-leakage current cantilever floating gate of the present invention is based on the P-type Si substrate 2, and the four switches are all composed of NMOS switch tubes 1, and the gates of the four NMOS switch tubes 1 The electrode is a cantilever floating gate 6 suspended above the gate oxide layer 10, and is made of Al. The cantilever floating gate 6 is fixed by the anchor region 5, and a pull-down electrode 7 is deposited below the cantilever gate 6. It is distributed between the anchor region 5 and the gate oxide layer 10, covered with a silicon nitride dielectric layer 8, and the pull-down electrode is grounded. These four uniquely structured NMOS switch tubes 1 and two resistors R together constitute a RS flip-flop.

[0017] The RS flip-flop of the silicon-based low-leakage current cantilever beam floating gate of the present invention is mainly composed of two NAND gates, wherein the output terminal Q of the NAND gate ① is co...

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Abstract

The invention provides an RS trigger of a silica-based double-cantilever beam floating gate with low leakage current, wherein the RS trigger is composed of two NAND gates. Each NAND gate is formed by connecting two NMOS switch transistors (1) and a resistor R in series, wherein one input end of the first NAND gate ((1)) is connected with an output end of the second NAND gate ((2)); one input end of the second NAND gate ((2)) is connected with an output end of the first NAND gate ((1)); a first input signal (R) is connected with cantilever beam floating gates (6) in the NMOS switch transistors (1) in the first NAND gate ((1)); a second input signal (S) is connected with cantilever beam floating gates (6) in the NMOS switch transistors (1) in the second NAND gate ((2)). The whole RS trigger is manufactured based on a P type Si substrate and four NMOS switch transistors (1) have cantilever beam floating gates (6) which can float up and down, so the RS trigger of the invention effectively reduce leakage current of the gate in the RS trigger, thereby greatly reducing power dissipation of the RS trigger.

Description

technical field [0001] The invention provides an RS flip-flop of a silicon-based low-leakage current cantilever beam floating gate, which belongs to the technical field of micro-electro-mechanical systems (MEMS). Background technique [0002] In most digital integrated circuits, in addition to combinational logic circuits with logic operations and arithmetic operations, circuits with storage functions are also required, and the RS flip-flop is a sequential logic that combines combinational logic circuits and storage circuits. circuit, RS flip-flop is widely used in various digital circuits due to its simple structure, easy integration, fast speed and other advantages. The simplest RS flip-flop can be obtained by cross-connecting the input and output of two NAND gates, which has two input terminals R and S and two output terminals Q and The most important structure of this basic RS flip-flop is the MOS switch tube. MOS devices have many advantages. Therefore, how to reduce...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K3/012H03K3/02
Inventor 廖小平褚晨蕾
Owner SOUTHEAST UNIV