rs flip-flop based on silicon-based low-leakage cantilever floating gate
A cantilever beam and floating gate technology, applied in electrical pulse generator circuits, electrical components, and electrical pulse generation, etc., can solve the problems of device stability degradation, leakage, excessive power consumption, etc. Small gate leakage current, effect of reducing DC power consumption
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[0016] The RS flip-flop of the silicon-based low-leakage current cantilever floating gate of the present invention is based on the P-type Si substrate 2, and the four switches are all composed of NMOS switch tubes 1, and the gates of the four NMOS switch tubes 1 The electrode is a cantilever floating gate 6 suspended above the gate oxide layer 10, and is made of Al. The cantilever floating gate 6 is fixed by the anchor region 5, and a pull-down electrode 7 is deposited below the cantilever gate 6. It is distributed between the anchor region 5 and the gate oxide layer 10, covered with a silicon nitride dielectric layer 8, and the pull-down electrode is grounded. These four uniquely structured NMOS switch tubes 1 and two resistors R together constitute a RS flip-flop.
[0017] The RS flip-flop of the silicon-based low-leakage current cantilever beam floating gate of the present invention is mainly composed of two NAND gates, wherein the output terminal Q of the NAND gate ① is co...
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