Thin film transistor, manufacturing method thereof, array substrate and display device

Abstract

The invention discloses a thin film transistor, a manufacturing method thereof, an array substrate and a display device, which belongs to the technical field of thin film transistors. The thin film transistor comprises a substrate, a gate electrode, a gate insulation layer and an active layer. The gate insulation layer comprises an inner defect prevention layer and an interface defect prevention layer, wherein the inner defect prevention layer is located between the interface defect prevention layer and the gate electrode; the inner defect prevention layer is used for reducing inner defects of the gate insulation layer; and the interface defect prevention layer is used for reducing defects of a contact interface between the gate insulation layer and the active layer. Through arranging the gate insulation layer in the above mode, the defect number of the inner part of the gate insulation layer and the defect number of the contact surface between the gate insulation layer and the active layer can be reduced, accumulation of carriers (positrons) inside the gate insulation layer and on the contact surface between the gate insulation layer and the active layer can thus be reduced, thin film transistor threshold voltage offset phenomena can be effectively reduced, and the defect rate of the thin film transistors is reduced.

Description

technical field [0001] The invention relates to the technical field of thin film transistors, in particular to a thin film transistor and a preparation method thereof, an array substrate, and a display device. Background technique [0002] A thin film transistor (Thin Film Transistor, referred to as "TFT") is a key device in a liquid crystal display device, and plays a very important role in the performance of the display device. [0003] Existing thin film transistors mainly include a gate electrode, a gate insulating layer, an active layer, an ohmic contact layer, a source-drain electrode, a passivation layer, and a pixel electrode that are sequentially stacked on a substrate. [0004] Under light conditions, the existing thin film transistors will generate photo-generated carriers, which will accumulate in the defect states in the gate insulating layer or in the defect states at the interface between the gate insulating layer and the active layer, thereby forming thin fil...

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problem of poor stability of existing thin film transistors under light conditions, an embodiment of the present invention provides a thin film transistor and its preparation method, an array substrate, and a display device

Images