Sheet holder positioning apparatus during sensor single crystal silicon etching process

Abstract

The present invention discloses a sheet holder positioning apparatus during a sensor single crystal silicon etching process. The sheet holder positioning apparatus comprises a reaction chamber, wherein the axial line position of the reaction chamber is provided with a sheet holder, the sheet holder is connected to a sheet holder rotating mechanism arranged outside the reaction chamber, the outer side of the reaction chamber is provided with an electromagnetic coil, a plurality of support rod members upward extending in a horizontal direction are arranged on the sheet holder inside the reaction chamber, the end portion positions of each support rod member are respectively provided with a guide wheel, the guide wheels and the support rod members are connected through rotation shafts, the axial line of the guide wheel is parallel to the axial line of the reaction chamber, and the guide wheels intersect on the inner wall of the reaction chamber. With the sheet holder positioning apparatus using the technical scheme, the sheet holder can be subjected to the positioning treatment through the plurality of the support rod members during the sheet holder etching processing process inside the reaction, such that the sheet holder can always be at the axial line position of the reaction chamber so as to improve the etching processing precision of the plurality of the single crystal silicon in the sheet holder.

Description

technical field [0001] The invention relates to a processing device for sensor components, in particular to a chip holder positioning device in the etching process of sensor single crystal silicon. Background technique [0002] During the processing of monocrystalline silicon for sensors, it needs to be etched; in the existing etching process, it is often done by stacking multiple monocrystalline silicon Introduce the reactive gas at the position, and make the reactive gas generate plasma in the electric field environment to etch the single crystal silicon; the rack usually needs to be rotated during the etching process to increase the contact uniformity between the single crystal silicon and the plasma However, the rotation of the rack may cause it to shift, resulting in uneven contact between the single crystal silicon and the plasma, thereby affecting its etching effect. Contents of the invention [0003] The technical problem to be solved by the present invention is t...

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Problems solved by technology

[0002] During the processing of monocrystalline silicon for sensors, it needs to be etched; in the existing etching process, it is often done by stacking multiple monocrystalline silicon Introduce the reactive gas at the position, and make the reactive gas generate plasma in the electric field environment to etch the single crystal silicon; the rack usually needs to be rotated during the etching process to increase the contact uniformity between the single crystal silicon and the plasma However, the rotation of the rack may cause it to shift, resulting in uneven contact between the single crystal silicon and the plasma, thereby affecting its etching effect

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