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Reverse conducting field stop insulated gate bipolar transistor and method of making the same

A bipolar transistor and reverse conduction technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems affecting IGBT performance and other issues

Active Publication Date: 2019-03-22
PFC DEVICE HLDG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the N+ type doped layer and the P type doped layer are generally located on the same plane on the back of the substrate, a lateral Zener diode (Zener diode) will be formed, which will affect the performance of the IGBT

Method used

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  • Reverse conducting field stop insulated gate bipolar transistor and method of making the same
  • Reverse conducting field stop insulated gate bipolar transistor and method of making the same
  • Reverse conducting field stop insulated gate bipolar transistor and method of making the same

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Embodiment Construction

[0030] see Figure 1A to Figure 1L , is a schematic flowchart of a reverse conducting field stop insulated gate bipolar transistor device according to the first embodiment of the present invention.

[0031] Such as Figure 1A As shown, first on an N-type substrate 10 according to the traditional process to complete part of the MOSFET process (that is, the MOSFET front-end element 60 and the contact hole 62 shown in this figure), then use the protective layer 20 (such as tape, protective carrier sheet or protective film) to cover the front MOSFET components for protection (such as Figure 1B shown). in Figure 1A Some of the MOSFET components shown refer to the process stage where the contact hole (contact hole) is eroded to 90%, and the thickness of the interlayer dielectric layer (IDL) is also increased by 10% to protect the front-side components in the subsequent back-side process.

[0032] Such as Figure 1C As shown, backside grinding is performed on the N-type substra...

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PUM

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Abstract

The invention provides a reverse conduction field stop insulated gate bipolar transistor and a manufacturing method thereof. The reverse conduction field stop insulated gate bipolar transistor comprises the components of a first conductive substrate; a plurality of trenches which are formed on the bottom surface of the first conductive substrate; a plurality of first conductive doped regions which are formed on the bottom surfaces of the trenches; a second conductive type doped region which is formed on the bottom surface of the first conductive substrate; and a first conductive field stop doped region which is arranged in the first conductive substrate and is separated from the bottom of the first conductive substrate for a field stop depth, wherein the field step depth is larger than the trench depth. Because the plurality of first conductive regions are separated from the second conductive regions for a certain distance, forming of a lateral Zener diode on the surface of the substrate can be restrained and furthermore the performance of the insulated gate bipolar transistor is improved.

Description

technical field [0001] The invention relates to an insulated gate bipolar transistor and a manufacturing method thereof, in particular to a reverse conduction field stop insulating gate bipolar transistor and a manufacturing method thereof. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a combination of metal-oxide-semiconductor field effect transistor (MOSFET) and bipolar junction transistor (bipolar junction transistor, BJT) Composite structure. IGBT is widely used in high-voltage and high-power applications because it combines the characteristics of MOSFETs that are easy to use gate control and the characteristics of BJTs with low turn-on voltage drop. [0003] A general IGBT (such as a penetrating IGBT) mainly includes a P+ type semiconductor substrate on which an N-type buffer layer is formed, and then an N-type epitaxial layer is formed on the N-type buffer layer as an IGBT. Drain of the parasitic MOSFET. Next, a gate structure (gate) and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/331H01L29/739H01L29/06
Inventor 陈美玲郭鸿鑫夏毅伦
Owner PFC DEVICE HLDG