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IGCT (integrated gate commutated thyristor) based H-bridge power module

A technology of power modules and insulating spacers, applied in the field of high-voltage and high-power inverter power modules, can solve the problems of reducing the power density of the power module system, increasing the space volume of the power module system, etc. The effect of simple structure, easy electrical connection and maintenance operation

Inactive Publication Date: 2015-10-28
CSR ZHUZHOU ELECTRIC LOCOMOTIVE RES INST
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Problems solved by technology

[0003] In the prior art, two-level modules based on IGCT (integrated Gate Commutated Thyristors, integrated gate commutated thyristors) (such as figure 1 As shown, the two-level module includes two series-connected IGCTs and anti-parallel diodes connected in parallel with the two IGCTs, that is, free-wheeling diodes) The input is connected in parallel, and the output is connected in series to realize the H-bridge. For example, to achieve a 6KV high-voltage output requires 12 1 two-level modules, and 18 two-level modules for 9KV high-voltage output, but so many two-level modules will disperse the entire power module system, increase the space volume of the power module system, and reduce the power module system. power density

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  • IGCT (integrated gate commutated thyristor) based H-bridge power module

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Embodiment Construction

[0029] The core of the present invention is to provide an IGCT-based H-bridge power module, which integrates two two-level circuits into one body, which greatly improves the integration and power density of the H-bridge power module, and at the same time ensures that the module structure is simple and easy to operate connection and maintenance operations.

[0030] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the prese...

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Abstract

The invention discloses an IGCT (integrated gate commutated thyristor) based H-bridge power module, which comprises an IGCT press-fitting string, a freewheel diode press-fitting string, an absorption diode press-fitting string and a support frame, wherein the support frame is used for supporting the IGCT press-fitting string, the freewheel diode press-fitting diode string and the absorption diode press-fitting string. The H-bridge power module disclosed by the invention adopts a three-string type press fitting mode, and two two-level circuits are integrated into a whole body, thereby greatly improving the integration level and the power density of the H-bridge power module, ensuring a simple structure of the module at the same time, and being easy for electrical connection and maintenance operations.

Description

technical field [0001] The invention relates to the technical field of high-voltage and high-power inverter power modules, in particular to an IGCT-based H-bridge power module. Background technique [0002] Medium and high voltage multilevel high-power converters are mainly used in high-power transmission systems such as electric power, metallurgical rolling mills, mine hoists, oil drilling, and ship propulsion. They have high reliability, small space volume, compact structure, and high power levels. High, high power density and other requirements. At present, the H-bridge multi-level topology, the diode-clamped three-level topology, and the flying-capacitor three-level topology have become the main implementation topologies for market applications. Due to the limitations of the power device withstand voltage level and shutdown current level, the diode-clamped three-level topology is most widely used in the 3KV medium voltage level, while the 6KV and 10KV high-voltage level...

Claims

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Application Information

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IPC IPC(8): H02M1/00
Inventor 胡家喜刘少奇邹扬举李彦涌孙保涛朱武马振宇罗凌波周伟军刘建平陈涛
Owner CSR ZHUZHOU ELECTRIC LOCOMOTIVE RES INST
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