RS trigger for silicon-based low-leakage-current clamped beam grid MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) NOR gate

Abstract

The invention discloses an RS trigger for a silicon-based low-leakage-current clamped beam grid MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) NOR gate. The RS trigger comprises a first NOR gate (G1) which consists of a first clamped beam grid NMOS (N-channel Metal Oxide Semiconductor) transistor (1) and a second clamped beam grid NMOS transistor (2); a second NOR gate (G2) which consists of a third clamped beam grid NMOS transistor (3) and a fourth clamped beam grid NMOS transistor (4); and two resistors with high resistance values. The RS trigger is manufactured on a P type silicon substrate, and the grids of the four NMOS transistors are suspended on a silicon dioxide layer and made of Al. Parts, which are below clamped beam grids, of pull-down electrodes are covered with the silicon dioxide layer, and the pull-down electrodes are grounded. The pull-down voltages of the clamped beam grids of the NMOS transistors are designed to be equal to the threshold voltages of the NMOS transistors. Only when the voltages applied to the clamped beam grids are greater than the threshold voltages of the NMOS transistors, the clamped beam grids can be pulled down into contact with the silicon dioxide layer in order to inversely conduct the clamped beam grid NMOS transistors. Thus, the RS trigger has low direct-current leakage current.

Description

technical field [0001] The invention provides an RS flip-flop of a silicon-based low-leakage current solid-supported beam gate MOSFET (metal oxide semiconductor field effect transistor) NOR gate, which belongs to the technical field of MEMS (micro-electro-mechanical systems). Background technique [0002] Since the 1950s, the tremendous development of microelectronics technology has promoted the prosperity of the entire IT industry, making the world accelerate into the Internet era. As the top priority of microelectronics technology, integrated circuits have also shown a strong growth trend. With the continuous development of the integrated circuit design industry, various special-purpose chips and circuits have been designed, and these chips and circuits can realize their own specific functions. However, in recent years, the integration scale of chip circuits has become larger and larger, and the heat dissipation and static power consumption of transistors in chips have bec...

AI Technical Summary

Problems solved by technology

However, in recent years, the integration scale of chip circuits has become larger and larger, and the heat dissipation and static power consumption of transistors in chips have become more and more serious. Changes in chip temperature will affect the stability of transistors and integrated circuits.

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