Silicon-based low-leakage-current cantilever grid MOSFET NOR gate

Abstract

The invention relates to a silicon-based low-leakage-current cantilever grid MOSFET NOR gate which is composed of two cantilever grid NMOS, namely a first NMOS (1) and a second NMOS (2), and a load resistor (3). The source electrodes of the NMOSs are connected and grounded, the drain electrodes of the NMOSs are connected and then connected to the supply voltage via the load resistor (3), two paths of input signals (A and B) are input at the grid electrodes of the NMOSs respectively, and output signals are output between the drain electrodes of the NMOSs and the load resistor (3). Leads (4) are made of Al, the grid electrodes of the NMOSs are hung over a silica layer (5) and form cantilever grids (6), one end of each cantilever grid (6) is fixed to an anchor area (7), and the other end of the cantilever grid (6) is floated over the silica layer (5). When the loaded voltage is lower than the threshold voltage of the NMOSs, the cantilever grids cannot be pulled down, and thus, the NOR gate is lower in the leakage DC.

Description

technical field [0001] The invention provides a silicon-based low-leakage current cantilever beam gate Metal Oxide Semiconductor Field Effect Transistor (MOSFET) NOR gate, which belongs to the technical field of micro-electromechanical systems (MEMS). Background technique [0002] With the in-depth development of microelectronics technology, the size of transistors has now reached the nanometer level, and the integration level of the corresponding integrated circuit per unit area is still continuously improving, and the functions of the chip are becoming more and more complex, showing a state of digital-analog hybrid. At the same time, the processing speed of chips is getting higher and higher. Then there is the problem of power consumption of the integrated circuit, and excessive power consumption will make the chip overheat, and the operating characteristics of the transistor will be affected by the temperature and change, so the overheated chip temperature will not only r...

AI Technical Summary

Problems solved by technology

Then there is the problem of power consumption of the integrated circuit, and excessive power consumption will make the chip overheat, and the operating characteristics of the transistor will be affected by the temperature and change, so the overheated chip temperature will not only reduce the life of the chip, but also Will affect the stability of the chip

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