Silica-based low-leakage-current clamped beam grid field effect transistor differential amplifier

Abstract

The invention discloses a silica-based low-leakage-current clamped beam grid field effect transistor differential amplifier which is composed of two clamped beam grid NMOS transistors and a constant-current source, the source electrodes of the two NMOS transistors are connected together and jointly connected with the lower constant-current source, the constant-current source is grounded, the grid electrodes of the two NMOS transistors jointly serve as an input end of AC signals, the drain electrodes of the two NMOS transistors are connected with resistors respectively, the differential amplifier is made on a P-type silicon substrate, the grid electrodes of the two NMOS transistors are suspended above a silicon dioxide layer and made of Al. The part, below a clamped beam grid, of a pull-down electrode is covered by the silicon dioxide layer, and the pull-down electrode is grounded through a high-frequency choke coil. Only when the voltage charged on the clamped beam grid is larger than the threshold voltage of the NMOS transistors, the clamped beam grid can be pulled down and make contact with the silicon dioxide layer so that the clamped beam grid and the NMOS transistors are in reverse conduction, and when the charged voltage is smaller than the threshold voltage of the NMOS transistors, the clamped beam grid cannot be pulled down, and the differential amplifier has smaller DC leakage currents.

Description

technical field [0001] The invention provides a silicon-based low-leakage current solid-supported beam gate metal oxide field effect transistor MOSFET differential amplifier, which belongs to the technical field of micro-electromechanical systems. Background technique [0002] With the in-depth development of microelectronics technology, the size of transistors has now reached the nanometer level, and the integration level of the corresponding integrated circuit per unit area is still continuously improving, and the functions of the chip are becoming more and more complex, showing a state of digital-analog hybrid. At the same time, the processing speed of chips is getting higher and higher. Then there is the problem of power consumption of the integrated circuit, and excessive power consumption will make the chip overheat, and the operating characteristics of the transistor will be affected by the temperature and change, so the overheated chip temperature will not only reduc...

AI Technical Summary

Problems solved by technology

Then there is the problem of power consumption of the integrated circuit, and excessive power consumption will make the chip overheat, and the operating characteristics of the transistor will be affected by the temperature and change, so the overheated chip temperature will not only reduce the life of the chip, but also Will affect the stability of the chip

Images