Silicon-Based Low Leakage Current Immobilized Beam-Gate Field-Effect Transistor Differential Amplifier

Abstract

The silicon-based low-leakage current solid-supported beam-gate field-effect transistor differential amplifier of the present invention is composed of two fixed-supported beam-gate NMOS transistors and a constant current source. Connected, the constant current source is grounded, the gates of the two NMOS transistors are used as the input terminal of the AC signal, and the drains of the two NMOS transistors are respectively connected to the resistors. The differential amplifier is made on a P-type silicon substrate. The two NMOS transistors The gate of the tube is suspended above the silicon dioxide layer and is made of Al; the part of the pull-down electrode under the fixed beam grid is covered by the silicon dioxide layer, and the pull-down electrode is grounded through a high-frequency choke coil; only when solid The voltage applied to the beam grid is greater than the threshold voltage of the NMOS transistor, and the beam grid can be pulled down and contact the silicon dioxide layer, so that the NMOS transistor of the beam grid is reversed. When the applied voltage is lower than the threshold voltage of the NMOS tube When the beam grid is fixed, it cannot be pulled down, so that the differential amplifier has a small DC leakage current.

Description

technical field [0001] The invention provides a silicon-based low-leakage current solid-supported beam gate metal oxide field effect transistor MOSFET differential amplifier, which belongs to the technical field of micro-electromechanical systems. Background technique [0002] With the in-depth development of microelectronics technology, the size of transistors has now reached the nanometer level, and the integration level of the corresponding integrated circuit per unit area is still continuously improving, and the functions of the chip are becoming more and more complex, showing a state of digital-analog hybrid. At the same time, the processing speed of chips is getting higher and higher. Then there is the problem of power consumption of the integrated circuit, and excessive power consumption will make the chip overheat, and the operating characteristics of the transistor will be affected by the temperature and change, so the overheated chip temperature will not only reduc...

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Problems solved by technology

Then there is the problem of power consumption of the integrated circuit, and excessive power consumption will make the chip overheat, and the operating characteristics of the transistor will be affected by the temperature and change, so the overheated chip temperature will not only reduce the life of the chip, but also Will affect the stability of the chip

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