Silicon-Based Low Leakage Current Immobilized Beam-Gate Metal-Oxide Field-Effect Transistor NOR Gate

Abstract

The invention discloses a silicon-based low-leakage-current solid strut-beam MOSFET NOR gate, and the NOR gate consists of two solid strut-beam gate NMOSs: a first NMOS tube (1) and a second NMOS tube (2), and also a load resistor (3). The source electrodes of the two NMOS tubes (1) and (2) are connected together and then are grounded, and the drain electrodes of the two NMOS tubes (1) and (2) are also connected together and then are connected with a supply voltage through the load resistor. Two input signals A and B are respectively inputted from the grid electrodes of the two NMOS tubes (1) and (2). An output signal is outputted from the drain electrodes of the two NMOS tubes (1) and (2) and the load resistor (3). The pull-down voltages of solid strut-beam grids of the two NMOS tubes (1) and (2) are designed to be equal to the threshold voltages of the NMOS tubes (1) and (2). Only when the voltages applied to the solid strut-beam grids are greater than the threshold voltages of the NMOS tubes (1) and (2), can the solid strut-beam grids be pulled down and contact with a silicon dioxide layer, thereby enabling the solid strut-beam gate NMOSs to be reversely connected. When the applied voltages are less than the threshold voltages of the NMOS tubes (1) and (2), the solid strut-beam grids cannot be pulled down, thereby enabling the NOR gate to have a smaller DC leakage current.

Description

technical field [0001] The invention provides a silicon-based low-leakage current solid-supported beam gate metal oxide semiconductor field effect transistor (MOSFET) NOR gate, which belongs to the technical field of micro-electromechanical systems (MEMS). Background technique [0002] The emergence of integrated circuit technology has led to a huge leap in the development of the entire IT industry, greatly reducing the size of computers, and accelerating the entry of human beings into the information age. With the in-depth development of microelectronics technology, the size of transistors has developed to the nanometer level, and the integration level of the corresponding integrated circuit unit area is still continuously improving. The processing speed is getting higher and higher. Then there is the problem of power consumption of the integrated circuit, and excessive power consumption will make the chip overheat, and the operating characteristics of the transistor will ...

AI Technical Summary

Problems solved by technology

Then there is the problem of power consumption of the integrated circuit, and excessive power consumption will make the chip overheat, and the operating characteristics of the transistor will be affected by the temperature and change, so the overheated chip temperature will not only reduce the life of the chip, but also Will affect the stability of the chip

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