Method used for reducing oxygen content of czochralski silicon

A technology of Czochralski single crystal and oxygen content, which is applied in the directions of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of difficulty in manufacturing silicon nitride crucibles, increase in manufacturing cost, and influence on the quality of single crystals, etc. Achieving the effect of low cost, less investment and lower oxygen content
CN105019017AInactive Publication Date: 2015-11-04INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL
Publication Date
2015-11-04
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a method used for reducing oxygen content of czochralski silicon. The method comprises following steps: the power of a bottom auxiliary heater is adjusted in crystal pulling process, crucible rotating speed is adjusted, argon flow rate and furnace pressure are adjusted. According to the method, no new device is used, effects of thermal field existing parts are achieved fully via technological parameter adjustment and combination based on an original thermal field; the method is reasonable and simple compared with a conventional oxygen reducing method; no other impurity is introduced in the whole crystal pulling process, and the other performance of monocrystalline silicon is not influenced; cost is low; and effect is excellent.
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Description

Technical field:

[0001] The invention relates to a method for reducing the oxygen content in Czochralski single crystal silicon, in particular to a method for reducing the oxygen content by adjusting the auxiliary heater power and the crystal pulling process in the single crystal pulling process. Background technique:

[0002] The global market share of monocrystalline silicon cells is about 30%. The P-type conversion efficiency of 19.2%-19.8% is far from the theoretical limit of 22%-23%. The theoretical efficiency of N-type monocrystalline cells can reach about 27%. Polycrystalline has a large share, but the conversion rate is 17.8%-18.2%, which is close to the theoretical limit of 19%. Monocrystalline cells have a lot of room for efficiency improvement, and their market share will gradually increase in the future, but the quality of monocrystalline cells is crucial to the efficiency of monocrystalline cells, especially the oxygen in monocrystalline silicon, which will not ...

Claims

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