Method used for reducing oxygen content of czochralski silicon

A technology of Czochralski single crystal and oxygen content, which is applied in the directions of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of difficulty in manufacturing silicon nitride crucibles, increase in manufacturing cost, and influence on the quality of single crystals, etc. Achieving the effect of low cost, less investment and lower oxygen content

Inactive Publication Date: 2015-11-04
INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL
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Problems solved by technology

[0004] Summarizing the disadvantages of the existing technology: (1) The energy consumption of the magnetic field increases, which increases the manufacturing cost; (2) The silicon nitride crucible is difficult to manufacture, and additives are used in the production process, which affects the quality of single crystals, and has not been used in batches in the market

Method used

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  • Method used for reducing oxygen content of czochralski silicon

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] The method includes adjusting and changing the power of the auxiliary heater at the bottom, the rotating speed of the crucible, the flow of argon gas and the furnace pressure during the crystal pulling process. It is characterized in that: the power of the bottom auxiliary heater is reduced from 30-35kw to 15-20kw when the temperature is stable, and does not change when it is gradually reduced to 5kw in the later stage of equal diameter; the rotation speed of the crucible is instantaneous when it enters equal diameter Reduce 2-3r revolutions, and slowly decrease in the later stage of the equal diameter; use low furnace pressure to stabilize the temperature, the furnace pressure gradually increases at the equal diameter head, and the argon flow rate gradually decreases at the equal diameter head.

[0017] The adjustment and change of the power of the bottom auxiliary heater means that when the temperature is stable, the power of the bottom auxiliary heater is reduced from...

Embodiment 2

[0022] The method includes adjusting and changing the power of the auxiliary heater at the bottom, the rotating speed of the crucible, the adjusting and changing of the argon gas flow and the furnace pressure during the crystal pulling process. The specific implementation process is as follows:

[0023] The adjustment and change of the power of the bottom auxiliary heater means that when the temperature is stable, the power of the bottom auxiliary heater is reduced from 35kw when the material is formed to 20kw in an instant, and the power of the bottom auxiliary heater remains unchanged during the process of seeding, shouldering, and turning. , the power of the auxiliary heater at the bottom is reduced to 5kw at the speed of 2kw / h when the equal-diameter leftover material is 60kg, and it does not change until the end of the crucible. The power change process of the bottom auxiliary heater is accompanied by the automatic adjustment of the power of the main heater.

[0024] The...

Embodiment 3

[0028] The method includes adjusting and changing the power of the auxiliary heater at the bottom, the rotating speed of the crucible, the adjusting and changing of the argon gas flow and the furnace pressure during the crystal pulling process. The specific implementation process is as follows:

[0029] The adjustment and change of the power of the bottom auxiliary heater means that when the temperature is stable, the power of the bottom auxiliary heater is reduced from 30kw when the material is formed to 15kw in an instant, and the power of the bottom auxiliary heater remains unchanged during the process of seeding, shouldering, and turning. . When the equal-diameter remaining material is 50kg, the power of the bottom auxiliary heater is reduced to 5kw at a speed of 2kw / h, and does not change until the end of the finishing. The power change process of the bottom auxiliary heater is accompanied by the automatic adjustment of the power of the main heater.

[0030] The adjustm...

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Abstract

The invention relates to a method used for reducing oxygen content of czochralski silicon. The method comprises following steps: the power of a bottom auxiliary heater is adjusted in crystal pulling process, crucible rotating speed is adjusted, argon flow rate and furnace pressure are adjusted. According to the method, no new device is used, effects of thermal field existing parts are achieved fully via technological parameter adjustment and combination based on an original thermal field; the method is reasonable and simple compared with a conventional oxygen reducing method; no other impurity is introduced in the whole crystal pulling process, and the other performance of monocrystalline silicon is not influenced; cost is low; and effect is excellent.

Description

Technical field: [0001] The invention relates to a method for reducing the oxygen content in Czochralski single crystal silicon, in particular to a method for reducing the oxygen content by adjusting the auxiliary heater power and the crystal pulling process in the single crystal pulling process. Background technique: [0002] The global market share of monocrystalline silicon cells is about 30%. The P-type conversion efficiency of 19.2%-19.8% is far from the theoretical limit of 22%-23%. The theoretical efficiency of N-type monocrystalline cells can reach about 27%. Polycrystalline has a large share, but the conversion rate is 17.8%-18.2%, which is close to the theoretical limit of 19%. Monocrystalline cells have a lot of room for efficiency improvement, and their market share will gradually increase in the future, but the quality of monocrystalline cells is crucial to the efficiency of monocrystalline cells, especially the oxygen in monocrystalline silicon, which will not ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/20C30B15/14C30B29/06
Inventor 王军磊王岩谷守伟王永青贾海洋王建平武志军白大伟李小娜张茹
Owner INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL
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