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Semiconductor device of inductance-capacitance resonant circuit

A resonant circuit, inductance and capacitance technology, which is applied in the direction of semiconductor devices, circuits, semiconductor/solid-state device components, etc., can solve problems such as loss and leakage signal energy, and achieve the effect of reducing the overall area and reducing the generation of phase noise

Active Publication Date: 2018-02-09
REALTEK SEMICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at high frequencies, the signal will leak through the insulating layer to the silicon substrate, causing the energy loss of the signal

Method used

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  • Semiconductor device of inductance-capacitance resonant circuit
  • Semiconductor device of inductance-capacitance resonant circuit
  • Semiconductor device of inductance-capacitance resonant circuit

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Embodiment Construction

[0073] In order to clearly show each component, the insulating layer is sometimes shown in a transparent or omitted manner in the accompanying drawings, but this is not a limitation of the present invention. Moreover, terms such as "first", "second", "third" and "fourth" mentioned below are used to distinguish the referred elements, rather than to sort or limit the differences of the referred elements nature, and are not intended to limit the scope of the present invention.

[0074] Figure 1 to Figure 3 is a schematic diagram of a semiconductor device having an inductance-capacitance resonant circuit according to a first embodiment of the present invention, and Figure 4 to Figure 6 is a schematic diagram of a semiconductor device with an LC resonant circuit according to a second embodiment of the present invention.

[0075] refer to Figure 1 to Figure 6 , The semiconductor device with the LC resonant circuit includes an insulating layer 110 (hereinafter referred to as th...

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Abstract

The present disclosure provides a semiconductor device having an LC resonant circuit. The semiconductor device of the LC resonant circuit includes a first insulating layer, an inductance component and a capacitor component. The inductance component includes a coil line segment and two extension line segments. The coil line segment and the extension line segment are located on the same surface of the first insulating layer, and the extension line segment is respectively coupled to two ends of the coil line segment. The extension segments are spaced apart from each other and extend outward relative to the coil segments. The extension line segment and the coil line segment define a first area, and the capacitor component is built-in and arranged on the other surface of the first insulating layer opposite to the inductance component corresponding to the first area.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a semiconductor device with an inductance-capacitance resonant circuit. Background technique [0002] With the development trend of multi-functional integration in the electronic industry, more and more circuit elements need to be integrated and designed in the semiconductor chip. [0003] A typical semiconductor integrated circuit includes a silicon substrate. More than one insulating layer is disposed on the base, and more than one metal layer is disposed in the insulating layer. These metal layers can be formed into internal parts of the wafer by current semiconductor process technology. Therefore, in order to reduce the volume of electronic products, many electronic components are arranged in an embedded manner instead of a surface mounted technique (SMT) arrangement. [0004] In circuit design, LC resonant circuits are often used to provide signal transmission or filtering, such ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/64H01L23/522
Inventor 颜孝璁简育生叶达勋
Owner REALTEK SEMICON CORP