Method for reducing damage of substrate material by high-energy particle bombardment

Abstract

The invention provides a method for reducing damage of a substrate material by high-energy particle bombardment, wherein the method belongs to the field of plasma etching. The method comprises the steps of presetting a pulse modulation signal, wherein a pulse rising time t is shorter than D*T(D is the duty cycle of the pulse, and T is the period of the pulse); and then performing pulse modulation on a substrate bias RF power source through utilizing the pulse modulation signal as a modulation signal, thereby obtaining an RF modulation power with a rising edge t. Compared with the prior art, the method has advantages of reducing damage of a pulse modulation substrate material caused by high-energy particle bombardment at the early period of an offset voltage, ensuring high safety of the substrate material in an etching process, and realizing better performance of the etching device. Furthermore, according to different bias parameters required in etching, an appropriate t value can be selected so that the t value satisfies a requirement for etching various substrate materials. Furthermore the method can be combined with the discharging mode of different coil RF power sources, so that the method is adapted to different plasma discharging conditions.

Description

technical field [0001] The invention relates to a method for reducing the damage of a substrate material by high-energy ion bombardment, which belongs to the field of plasma etching. Background technique [0002] Plasma etching uses radio frequency discharge to decompose or ionize the reactive gas in the chamber to generate active particles, such as atoms, ions or free radicals, which diffuse to the etching part of the substrate and interact with the substrate material. reaction to obtain the desired pattern on the substrate. Plasma etching is widely used in material processing because of its advantages of fast etching rate and good etching pattern. [0003] At present, low-temperature plasma processing technology is a very important part of semiconductor production, especially in the manufacturing process of ultra-large-scale integrated circuits, nearly one-third of the processes need to be completed with the help of plasma technology, such as plasma thin film deposition ...

AI Technical Summary

Problems solved by technology

This method should solve the problem that in the field of deep silicon etching, the advantages of reducing the deformation of the etching morphology and reducing the material damage caused by high-energy ions cannot be achieved after the pulse modulation of the substrate bias power, so that it can be used during the etching process. Precisely control the etched topography of materials and preserve the safety of materials

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