Preparation method for trapezoid pixel Bank structure and OLED device
A trapezoidal, pixel technology, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as difficult surface hydrophilic and hydrophobic treatment of vertical pixel Bank structure, poor device pixel uniformity, and reduced device aperture ratio, etc. Achieve the effect of reducing the impact of lateral erosion, avoiding device open circuits, and reducing device fabrication costs
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[0033] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0034] combined with Figure 2-7 , the embodiment of the present invention provides a method for preparing a trapezoidal pixel Bank structure, comprising the following steps:
[0035] S01. Provide a TFT backplane, coat a layer of Bank material on the electrodes of the TFT backplane, and bake the Bank material to form a Bank layer with adhesion to the electrodes, wherein the Bank material is negative bank material;
[0036]In the above step S01, the TFT backplane includes a TFT array and electrodes sequentially stacked on a hard carrier substrate. As a preferred ...
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