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Fluorene-triphenylamine conjugated polymer electric storage material and preparation method of storage device thereof

A technology of conjugated polymers and triphenylamine, which is applied in the fields of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of chip size reduction and achieve error rate reduction, low cost, and simple preparation process Effect

Inactive Publication Date: 2018-04-03
HEILONGJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the size of the chip cannot be reduced infinitely, and high integration will inevitably face more technical difficulties

Method used

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  • Fluorene-triphenylamine conjugated polymer electric storage material and preparation method of storage device thereof
  • Fluorene-triphenylamine conjugated polymer electric storage material and preparation method of storage device thereof
  • Fluorene-triphenylamine conjugated polymer electric storage material and preparation method of storage device thereof

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specific Embodiment approach

[0037] The technical solution of the present invention is not limited to the following specific embodiments, but also includes any combination of the specific embodiments.

specific Embodiment approach 1

[0038] Specific Embodiment 1: In this embodiment, a method for preparing a memory device based on a fluorene-triphenylamine conjugated polymer is realized in the following steps:

[0039] Step 1, ultrasonically clean the ITO glass in reagent a, and store it in absolute ethanol for later use;

[0040] Step 2, dissolving the fluorene-triphenylamine conjugated polymer in toluene, stirring and ultrasonically dispersing (concentration is 3-15 mg / mL);

[0041] Step 3. Spin-coat the polymer solution evenly on the ITO glass through a homogenizer, and dry in vacuum to remove the solvent; the thickness of the polymer film is 20-100nm;

[0042]Step 4: Cover the surface of the polymer with a copper sheet having holes with uniform size distribution, and plate the top electrode Al on the polymer by evaporation. The thickness of the top electrode Al is 200-400 nanometers; the area of ​​the top electrode Al is 0.25-5mm 2 .

specific Embodiment approach 2

[0043] Embodiment 2: This embodiment is different from Embodiment 1 in that the organic solvent a in step 1 is deionized water, absolute ethanol, acetone, absolute ethanol, and deionized water. Other steps and parameters are the same as those in Embodiment 1.

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Abstract

A preparation method of a fluorene-triphenylamine conjugated polymer electrical storage device according to the present invention: ultrasonically clean the ITO glass in water, absolute ethanol, acetone, absolute ethanol, and deionized water, and store it in absolute ethanol Standby; use the fluorene-triphenylamine copolymer described in claim 1 as an electrical storage material, and prepare a polymer solution of 3 to 15 mg / mL; uniformly spin-coat the polymer solution on ITO glass, dry in vacuum, and remove the solvent ; The top electrode Al is plated on the polymer by vacuum evaporation. The organic electric storage device prepared by the invention has the characteristics of simple process operation, low cost, low working voltage and large switching current ratio. It has a good application prospect in the field of information storage.

Description

technical field [0001] The invention belongs to the field of new materials and technologies of electric memory. In particular, it relates to a kind of fluorene-triphenylamine conjugated polymer electric storage material and a preparation method of the electric storage device. Background technique [0002] With the rapid development of information technology and the rapid update of electronic digital products, people's demand for electric storage chips is increasing day by day. The technology of using traditional inorganic semiconductor materials to prepare electrical storage devices has been very mature, making it fully applied in various information fields. The continuous progress of the information industry has made small size and high integration an inevitable trend in the development of electrical storage devices. However, the size of the chip cannot be reduced infinitely, and high integration will inevitably face more technical difficulties. Therefore, the developmen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/05H01L51/30H01L51/40
CPCH10K85/10H10K10/00
Inventor 汪成虢德超王淑红王鹏李明霞赵晓峰常青孙治尧白续铎马东阁
Owner HEILONGJIANG UNIV