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Display substrate and manufacturing method thereof and display device

A technology for display substrates and substrate substrates, applied in semiconductor/solid-state device manufacturing, optics, instruments, etc., can solve problems such as poor contact and pixel electrode deposition fractures, and achieve the effect of reducing contact resistance and improving product yield.

Inactive Publication Date: 2015-11-25
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to solve the above problems, the present invention provides a display substrate, its preparation method, and a display device, which are used to solve the problem of barb angles formed between the resin layer and the passivation layer in the prior art, resulting in fractures during deposition of pixel electrodes, resulting in bad contact problem

Method used

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  • Display substrate and manufacturing method thereof and display device
  • Display substrate and manufacturing method thereof and display device
  • Display substrate and manufacturing method thereof and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] figure 2 It is a flow chart of a method for preparing a display substrate provided in Embodiment 1 of the present invention. Such as figure 2 As shown, the preparation method of the display substrate includes:

[0038] Step 1001, forming a first insulating layer on a base substrate.

[0039] Step 1002, forming a second insulating layer on the first insulating layer, the etching rate of the second insulating layer is lower than the etching rate of the first insulating layer.

[0040] In this embodiment, the step of forming the first insulating layer on the base substrate includes:

[0041] forming a thin film transistor on the base substrate, the thin film transistor including a gate, an active layer, a source and a drain;

[0042] The first insulating layer is formed on the thin film transistor, and the first via hole is arranged corresponding to the drain of the thin film transistor.

[0043] image 3 It is a schematic diagram of forming the first intermediate ...

Embodiment 2

[0056] This embodiment provides a display substrate, including a base substrate, a first insulating layer is disposed on the base substrate, a second insulating layer is disposed on the first insulating layer, and the engraving of the second insulating layer is The etching rate is lower than the etching rate of the first insulating layer, the second insulating layer and the first insulating layer are provided with a first via hole penetrating through the second insulating layer and the first insulating layer, The sidewall of the second insulating layer of the first via hole is smoothly connected with the sidewall of the first insulating layer. Optionally, a thin film transistor is disposed on the base substrate, the thin film transistor includes a gate, an active layer, a source and a drain, the first insulating layer is disposed on the thin film transistor, the The first via hole is set corresponding to the drain of the thin film transistor. Preferably, the first insulating ...

Embodiment 3

[0062] This embodiment provides a display device, including the display substrate provided in the second embodiment above. For details, reference may be made to the description of the second embodiment above, which will not be repeated here.

[0063] In the display device provided in this embodiment, in the method for preparing the display substrate, a first via hole penetrating through the second insulating layer and the first insulating layer is formed on the first insulating layer and the second insulating layer, and the The sidewalls of the first insulating layer of the first via hole are smoothly connected with the sidewalls of the second insulating layer, so as to avoid the formation of barb angles between the first insulating layer and the second insulating layer, resulting in breakage of the pixel electrode, thereby The contact resistance is reduced, and the product yield and the stability of the preparation process are improved.

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Abstract

The invention discloses a display substrate and a manufacturing method thereof and a display device. According to the manufacturing method, first through holes which run through a second insulating layer and a first insulating layer are formed in the first insulating layer and the second insulating layer; and the side wall of the first insulating layer and the side wall of the second insulating layer of the first through holes are in smooth connection, so that the phenomenon of a fracture of a pixel electrode caused by a barb angle formed between the first insulating layer and the second insulating layer is avoided. Therefore, the contact resistance is reduced; the product yield is increased; and the stability of the manufacturing technology is improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a display substrate, a preparation method thereof, and a display device. Background technique [0002] figure 1 It is a schematic diagram showing the structure of the substrate in the prior art. Such as figure 1 As shown, in the preparation process of the liquid crystal display device, a passivation layer 102 made of silicon nitride material is usually formed under the resin layer 101, and the passivation layer 102 acts as a water vapor barrier layer, which can improve the performance of the thin film transistor . During the process, the resin layer 101 is first exposed, developed and cured, and then the passivation layer 102 is etched to form via holes. Due to the difference in etching rate between the resin layer 101 and the passivation layer 102, the lateral etching of the passivation layer 102 will be caused, thereby forming a barb angle between the resin layer 101 and t...

Claims

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Application Information

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IPC IPC(8): H01L21/77H01L21/56H01L27/12H01L23/31
CPCH01L21/56H01L23/3171H01L23/3192H01L27/1214H01L27/1259H01L29/41733H01L27/1248G02F1/136227
Inventor 郭建
Owner BOE TECH GRP CO LTD