Method for preparing wrinkle-free graphene

A graphene, wrinkle-free technology, which is applied in the field of preparing wrinkle-free graphene, can solve the problems of graphene quality reduction, graphene surface wrinkle, etc., and achieve the effect of not being wrinkled

Active Publication Date: 2015-12-02
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above-mentioned shortcoming of prior art, the object of the present invention is to provide a kind of method for preparing the graphene without wrinkle, for solving the graphene surface prepared in the prior art has wrinkle, makes the problem that graphene quality reduces

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  • Method for preparing wrinkle-free graphene
  • Method for preparing wrinkle-free graphene
  • Method for preparing wrinkle-free graphene

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Embodiment Construction

[0035] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0036] see Figure 1 to Figure 7 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arb...

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Abstract

The present invention provides a method for preparing wrinkle-free graphene. The method comprises the following steps of: S1: providing a catalyzation substrate; performing ion implantation in a preset region of a surface of the catalyzation substrate to damage catalytic performance of the implantation region and to form a plurality of separate non-implantation units on the surface of the catalyzation substrate; and S2: putting the catalyzation substrate in a growth chamber; heating the catalyzation substrate to a preset temperature; introducing a carbon source to the growth chamber; and growing a plurality of separate wrinkle-free graphene units on the surface of the catalyzation substrate. According to the method provided by the present invention, not only high-quality graphene units with no wrinkle or low wrinkle density can be obtained, but also graphene units in a particular shape can be obtained by controlling the region in which ions are implanted, thereby meeting various device application demands.

Description

technical field [0001] The invention belongs to the field of low-dimensional materials and new materials, and relates to a method for preparing wrinkle-free graphene. Background technique [0002] Since the discovery of graphene by two scientists from the University of Manchester in 2004 using the method of micromechanical exfoliation, the appearance of graphene has stirred up huge waves. Graphene, the monoatomic layer of graphite, is a two-dimensional structure in which carbon atoms are arranged in a honeycomb shape. Graphene has unparalleled advantages in physical, chemical, and mechanical properties, making it have broad application prospects in the fields of electronics, information, energy, materials, and biomedicine. [0003] The conventional graphene preparation methods currently developed include: micromechanical exfoliation, pyrolytic silicon carbide (SiC), chemical vapor deposition (CVD) on transition metals and heavy metals, and chemical intercalation oxidation. ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04
Inventor 狄增峰戴家赟王刚郑晓虎汪子文薛忠营张苗
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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