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Biaxial stress application device and test method for output characteristics of strain mos chip

A technology of biaxial stress and application device, which is applied in the field of microelectronics, can solve the problems of non-detachable, limited test objects, inconvenient microscopic testing of transistors, etc., and achieve the effects of enhancing performance, overcoming uniaxial stress, and changing mobility

Active Publication Date: 2018-03-06
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] First, only uniaxial stress can be applied to transistors. If you want to apply biaxial stress to transistors, such devices cannot meet actual needs;
[0007] Second, the precision screw assembly is always fixed on the device and cannot be disassembled. Only through the action of the screw can the stress applied to the transistor be maintained at all times, which is not convenient for microscopic testing of the stress-applied transistor;
[0008] Third, the test objects are limited, and only deformation performance tests can be performed on gallium nitride, high electron mobility transistors and other semiconductor transistors;

Method used

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  • Biaxial stress application device and test method for output characteristics of strain mos chip
  • Biaxial stress application device and test method for output characteristics of strain mos chip
  • Biaxial stress application device and test method for output characteristics of strain mos chip

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Embodiment 1

[0043] See also Figure 1a-Figure 1b , Figure 1a-Figure 1b This is a schematic structural diagram of a biaxial stress applying device according to an embodiment of the present invention; the biaxial stress applying device includes four parts: a lower bracket a, an upper bracket b, a plug c, and a precision screw assembly d. The bracket a is located at the bottom of the stress applying device, the circular upper bracket b is located above the lower bracket a, the top c is located in the middle screw hole on the circular cross bar of the upper bracket a, and the precision screw assembly d is located on the upper bracket a Directly above. The specific structure is as follows:

[0044] See also figure 2 , figure 2 It is a schematic structural diagram of a lower bracket of a biaxial stress applying device according to an embodiment of the present invention. The figure 2 In the middle, the left figure is a structural diagram viewed upward from the bottom of the biaxial stress applyi...

Embodiment 2

[0049] See also Figure 1a-Figure 1b and Image 6 , Image 6 It is a schematic flow chart of a method for testing MOS output characteristics according to an embodiment of the present invention. This implementation will further describe the method for testing strain MOS output characteristics based on the device of the present invention.

[0050] Step 1. Fix the chip.

[0051] Place the silicon MOS chip on the ring of the lower support a, and then place the upper support b on the lower support a, that is, the upper surface of the silicon MOS is in contact with the lower surface of the ring of the upper support b, and the lower surface is in contact with the ring of the lower support a The upper surface is in contact; align the screw holes on the cuboid at both ends of the upper bracket and the lower bracket; fix the upper bracket b and the lower bracket a with screws.

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Abstract

The invention relates to a dual-axis stress applying device and a method for testing the output characteristic of a strain MOS chip. The method comprises steps of: (1) fixing the MOS chip between a lower support (a) and an upper support (b); (2) testing a first output characteristic curve of the MOS chip before dual-axis stress is applied to the MOS chip; (3) placing a push head (c) in a first screw hole located at the center of the upper support (b); (4) placing a precision screw assembly (d) on the upper support (b); (5) rotating a screw rotating shaft along certain direction in order to apply dual-axis stress to the MOS chip; (5) fixing the push head (c), uninstalling the precision screw assembly (d) and testing the second output characteristic curve of the MOS chip after the dual-axis stress is applied to the MOS chip; and (7) comparing the first output characteristic curve with the second output characteristic curve in order to obtain a test result.

Description

Technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a biaxial stress applying device and a method for testing the output characteristics of a strained MOS chip. Background technique [0002] Strained MOS technology is the focus of current development. Using strained MOS to improve carrier mobility has become the first choice for research and design of high-speed / high-performance small-size MOS chips and circuits. At present, there are many research reports on strained MOS chips and circuits at home and abroad, but the research on devices that exert stress on silicon MOS is rarely mentioned. The essential reason for the improved performance of strained MOSFET is that due to the change of lattice constant, the mobility of carriers in strained MOS is higher than that of ordinary silicon materials. In other words, the improvement in the performance of strained silicon devices is mainly due to the change in the energy ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66G01R31/26
CPCG01R31/26H01L22/30H01L22/34
Inventor 宣荣喜腾飞苗渊浩张鹤鸣胡辉勇
Owner XIDIAN UNIV