Preparation method of TEM (Transmission Electron Microscope) sample

A sample and chip technology, applied in the field of shallow trench isolation structure manufacturing, can solve the problems of high difficulty, low productivity, high cost, etc., and achieve simple, cost-effective, high-efficiency, and low-cost effects

Inactive Publication Date: 2015-12-09
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, there are two main disadvantages of this method: one is that the nanomanipulator equipment is expensive, up to hundreds of thousands of RMB, and the other more important t

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  • Preparation method of TEM (Transmission Electron Microscope) sample
  • Preparation method of TEM (Transmission Electron Microscope) sample
  • Preparation method of TEM (Transmission Electron Microscope) sample

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[0034] In order to make the above objects, features and advantages of the present invention more clearly understood, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be noted that the accompanying drawings of the present invention are all in a simplified form and use inaccurate scales, and are only used to facilitate and clearly assist the purpose of explaining the embodiments of the present invention.

[0035] like image 3 As shown, the present invention provides a method for preparing a TEM sample, comprising:

[0036] Step 1: As Figure 4 As shown, the chip 100 to be analyzed is provided. It should be noted that the chip 100 to be analyzed is a conventional product in the prior art, and it does not require staff to spend time on special research, and the cost is low. Further, the chip to be analyzed 100 includes a device layer 110 and a silicon substrate 120 , and the size (length×w...

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Abstract

The invention discloses a preparation method of a TEM (Transmission Electron Microscope) sample. The preparation method comprises the steps of step one, providing a to-be-analyzed chip, wherein the to-be-analyzed chip comprises a device layer and a silicon substrate; step two, fixedly connecting the device layer of the to-be-analyzed chip with a carrier; step three, thinning a target area of the silicon substrate; step four, cutting the device layer, and completing the preparation of the TEM sample. According to the preparation method of the TEM sample, disclosed by the invention, the operation mode is simple, the cost is low, and a curtain effect can be effectively removed.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a method for manufacturing a shallow trench isolation structure. Background technique [0002] TEM (Transmission electron microscope, referred to as: transmission electron microscope) has a wide range of applications in various fields including integrated circuit analysis, and FIB (focused ion beam) sample preparation is the most important in the semiconductor field. TEM sample preparation means. [0003] The conventional TEM sample preparation method is to use an ion beam to cut from the back-end metal of the chip to the direction of the silicon substrate to form a TEM thin slice sample. However, when the ion beam is cut, the metal (such as tungsten) or the cavity in the sample will form a curtain-like stretch mark due to the difference in cutting rate, that is, there is a curtain effect (Curtain Effect). The pull marks are as figure 1 with figure 2 arrow poi...

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Application Information

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IPC IPC(8): G01N1/28
Inventor 陈强陈胜
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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