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Apparatus and method for configuring data strobe signals in a memory device

A memory and signal technology, applied in the field of devices for configuring data strobe signals, can solve problems such as data transmission errors and delay deterioration

Active Publication Date: 2019-07-26
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This delay will result in data transmission errors
Mismatched loading / routing between the data signal DQ and data strobe DQS paths and / or simultaneous switching noise on the data signal DQ or data strobe DQS signal lines (due to simultaneous switching of multiple buffer / inverter) also exacerbates this delay

Method used

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  • Apparatus and method for configuring data strobe signals in a memory device
  • Apparatus and method for configuring data strobe signals in a memory device
  • Apparatus and method for configuring data strobe signals in a memory device

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Embodiment Construction

[0058] The following embodiments and figures will illustrate in more detail.

[0059] See image 3 , which is a schematic diagram of a non-volatile memory device 30 . The non-volatile memory device 30 includes a memory core 302 , a clock circuit element 304 , an input buffer 306 , a synchronization circuit 308 , a data output buffer 310 , a data strobe output buffer 312 , and a delay control circuit 314 .

[0060] The memory core 302 includes: a memory array, a logic control unit, a column address decoder, a row address decoder, and a sense amplifier. A memory array contains multiple memory cells arranged in rows and columns. Memory cells located in the same column are connected by word lines, and memory cells located in the same row are connected by bit lines. The sense amplifier is coupled to the bit line. The logic control unit is synchronized with an external frequency signal, or operates based on an internal oscillator. The logic control unit controls different memor...

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Abstract

The present invention is a non-volatile memory device, a circuit for synchronizing a frequency signal, and a method of configuring signal delays within a non-volatile memory device. The method for configuring signal delay in a non-volatile memory device comprises the steps of: receiving an external frequency signal; providing a data strobe signal, the data strobe signal representing that data stored in the non-volatile memory is available for access, The data strobe signal has an adjustable signal delay relative to the external clock signal; and a memory operation command is provided to the non-volatile memory device, thereby adjusting the signal delay.

Description

technical field [0001] The invention relates to a device for configuring data strobe signals in a non-volatile memory device. Background technique [0002] Non-volatile memory, such as flash memory, is a semiconductor that maintains stored data even when the power is turned off. Compared with hard disks, flash memory devices have faster read access times and better shock resistance. Therefore, flash memory devices are widely used in many devices, such as for storing data in computing devices, mobile phones, portable music players and other consumer electronic products. [0003] Some non-volatile memory devices operate in synchronization with an external clock signal (external clock) provided by the memory controller. When synchronizing in this way, the data stored in the non-volatile memory device can be accessed through the data strobe signal. [0004] See figure 1 , which is a signal schematic diagram 10 of a read operation on a volatile memory device. The signal sche...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/06
CPCG06F1/12G11C7/22G11C7/222G11C7/225G11C16/00G11C29/023G06F9/00
Inventor 张坤龙陈耕晖陈张庭
Owner MACRONIX INT CO LTD
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