Thin film transistor, manufacturing method thereof, array substrate and display device
A technology of thin film transistors and body parts, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, and electric solid-state devices. Effects of product cost, increased channel width, and reduced installation area
Active Publication Date: 2015-12-09
CHONGQING BOE OPTOELECTRONICS +1
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However, this type of method will increase the size of the TFT, thereby occupying a part of the area of the light-transmitting area, reducing the aperture ratio of the pixel, and affecting the display effect.
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[0023] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
[0024] figure 2 It is a schematic diagram of a partial structure of a thin film transistor in an embodiment of the present invention. see figure 2 , the thin film transistor includes a first electrode pattern and a second electrode pattern arranged in the same layer. Specifically, such as figure 2 The shown first electrode pattern includes ...
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The invention provides a thin film transistor, a manufacturing method thereof, an array substrate and a display device. The thin film transistor comprises a first electrode pattern and a second electrode pattern arranged in the same layer, wherein the first electrode pattern comprises a first bar section extending along a first direction; and the second electrode pattern comprises a bending section surrounding the first end of the first bar section and also comprises a second bar section extending along the first direction from the first end of the bending section. Thin film transistor channel forming regions comprise a region clamped between the bending section and the first bar section and a region clamped by the second bar section and the first bar section. The channel width is increased on the premise of not increasing the thin film transistor setting area, the device performance can be enhanced, the setting area is reduced, the product cost is reduced, and the product performance is enhanced.
Description
technical field [0001] The present invention relates to display technology, in particular to a thin film transistor, a manufacturing method thereof, an array substrate and a display device. Background technique [0002] The existing TFT-LCD (ThinFilmTransistor-LiquidCrystalDisplay, Thin Film Transistor-Liquid Crystal Display) mainly controls the rotation of liquid crystal molecules through the electric field generated between the pixel electrode and the common electrode to present the picture to be displayed. Therefore, there is a strict correspondence between the potential on the pixel electrode and the gray scale value of the pixel. Whether the potential of the pixel electrode can reach the required value is mainly determined by performance parameters such as the turn-on current of the TFT. Under the same process conditions, the width-to-length ratio (W / L, where W is the channel width and L is the channel length) of the TFT has a great effect on the performance parameters...
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IPC IPC(8): H01L29/786H01L29/08H01L29/10H01L21/336H01L27/12G02F1/1333
CPCG02F1/1333H01L29/0847H01L29/1033H01L29/786H01L29/78696G02F1/1368H01L29/41733H01L29/08H01L29/10H01L27/12G02F1/133345H01L29/1029
Inventor 顾可可杨妮胡伟苟中平刘信齐智坚侯宇松陈帅
Owner CHONGQING BOE OPTOELECTRONICS