Establishing method for improved HBT small-signal equivalent circuit model
An equivalent circuit model and equivalent circuit technology, applied in the field of microelectronics, can solve problems such as reducing the extraction accuracy and reducing the HBT small-signal equivalent circuit simulation accuracy.
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[0058] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.
[0059] The parameters extracted by an improved HBT small-signal equivalent circuit model building method of the present invention mainly include:
[0060] 1. Pad parasitic parameters: (1) Parasitic capacitance C p : Collector-emitter junction parasitic capacitance C pce , base-emitter junction parasitic capacitance C pbe and base-collector junction parasitic capacitance C pbc ; (2) Parasitic resistance R p : Pad base parasitic resistance R bpad , pad collector parasitic resistance R cpad and pad emitter parasitic resistance R epad ; (3) Parasitic inductance L p : Base parasitic inductance L bpad , collector parasitic inductance L cpad and emitter parasitic inductance L epad ;
[0061] 2. Device resistance parameters: emitter resistance R e , base external resistance R bx and collector resistor R c ;
[0062] 3. Interpolar m...
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