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Broadband terahertz harmonic mixer

A harmonic mixer and terahertz technology, which is applied in the solid-state terahertz field, can solve problems such as the inability to meet the needs of terahertz high-frequency broadband design, and achieve the effect of high applicable frequency range, reduction of resonance points, and wide bandwidth.

Active Publication Date: 2015-12-30
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to provide a wide-band terahertz harmonic mixer, which solves the problem that traditional inverted diodes cannot meet the design requirements of terahertz high-band wide-band, solves the problem of manual assembly of diodes, and removes Gallium arsenide substrate, to achieve the design purpose of broadband

Method used

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  • Broadband terahertz harmonic mixer
  • Broadband terahertz harmonic mixer

Examples

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Embodiment 1

[0037] Such as figure 1 with figure 2 shown.

[0038] A broadband terahertz harmonic mixer, comprising a cavity structure, a radio frequency waveguide 2, and a local oscillator waveguide 7, the cavity structure crosses the radio frequency waveguide 2 and the local oscillator waveguide 7, and a quartz substrate is arranged in the cavity structure 10. On the front surface of the quartz substrate 10, a pair of Schottky diodes 4 with the gallium arsenide substrate 16 removed is arranged. The pair of Schottky diodes 4 includes two symmetrical diodes, and the front sides of the two diodes all have metal anodes 14 , the two diodes are diode A and diode B respectively, and also include a front-end circuit and a back-end circuit arranged on the quartz substrate 10, wherein, the front side of the metal anode 14 of the diode A is provided with a gold wire A43, and the gold wire A43 is connected to the front-end Circuit connection, the metal anode 14 of the diode B is provided with a g...

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Abstract

The invention discloses a broadband terahertz harmonic mixer which comprises a cavity structure, a radio frequency waveguide and a local oscillator waveguide. The cavity structure transversely penetrates through the radio frequency waveguide and the local oscillator waveguide. A quartz substrate is arranged in the cavity structure. The front surface of the quartz substrate is provided with a Schottky diode pair with a gallium arsenide substrate removed. The Schottky diode pair comprises two symmetrical diodes. The front faces of the two diodes are provided with metal anodes. The two diodes are the diode A and the diode B. The broadband terahertz harmonic mixer further comprises a front-end circuit and a rear-end circuit which are arranged on the quartz substrate. The front face of the metal anode of the diode A is provided with a gold wire A, and the gold wire A is connected with the front-end circuit. The front face of the metal anode of the diode B is provided with a gold wire B, and the gold wire B is connected with the rear-end circuit.

Description

technical field [0001] The invention relates to solid-state terahertz technology, in particular to a broadband terahertz harmonic mixer. Background technique [0002] In the field of solid-state terahertz, the development of a qualified harmonic mixer is the basis for the study of communication systems. With the continuous development of terahertz communication technology, terahertz harmonic mixers are constantly developing to higher frequency bands. In the high-frequency band, the quartz substrate carrying the circuit and the cavity where the circuit is placed will become smaller, resulting in a gradual increase in processing accuracy and assembly difficulty. The existing inverted diode pair with gallium arsenide substrate has been unable to meet the design requirements of the wide frequency band of the high frequency harmonic mixer. In the traditional upside-down diode pair circuit, the diode pair is processed on a gallium arsenide substrate, and then upside down in the ...

Claims

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Application Information

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IPC IPC(8): H03D7/16
Inventor 张波纪东峰牛中乾刘戈高欣方灯陶源姚荣钊樊勇
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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