Inertial sensor and production method thereof

A technology of an inertial sensor and a manufacturing method, applied in the field of inertial sensors and their manufacturing, can solve problems such as easy damage and fragile structure layer, and achieve the effects of unlimited thickness, reduced die area, and reduced cost

Active Publication Date: 2016-01-13
HANGZHOU SILAN MICROELECTRONICS +1
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Problems solved by technology

[0006] In order to solve the above problems, the present invention proposes an inertial sensor and its manufacturing method to solve the problem that the structural layer formed by the existing surface micromachining technology is relatively fragile and easily damaged

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  • Inertial sensor and production method thereof

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Embodiment Construction

[0040] The manufacturing method of the inertial sensor proposed by the present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become apparent from the following description and claims. It should be noted that, the accompanying drawings are all in a very simplified form and in inaccurate scales, and are only used to facilitate and clearly assist the purpose of explaining the embodiments of the present invention.

[0041] refer to figure 1 , the manufacturing method of the inertial sensor of the present embodiment comprises the following steps:

[0042] Step S10, providing a first silicon substrate, and performing electrochemical etching on the first silicon substrate to form a porous silicon layer;

[0043] Step S11, forming a single crystal silicon layer on the porous silicon layer by means of epitaxy;

[0044] Step S12, forming a sacrificia...

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Abstract

The present invention provides an inertial sensor and a production method thereof, wherein electrochemical etching is performed on a first silicon substrate to form a porous silicon layer, then a monocrystalline silicon layer, a sacrificial layer, a through hole, a wiring layer and a buried layer are sequentially formed, a second silicon substrate and the first silicon substrate are bonded, the porous silicon layer is etched so as to separate the first silicon substrate and the second silicon substrate, and finally the monocrystalline silicon layer is patterned and the sacrificial layer exposed on the monocrystalline silicon layer is removed through an etching manner so as to form the movable structure layer. According to the present invention, the inertial sensor production method is compatible with the conventional IC manufacturing method so as to easily achieve integration of the micro-structure and the IC, and the monocrystalline silicon layer growing on the porous silicon layer in the epitaxial manner has advantages of low stress small, no limitation on the movable structure thickness and the like so as to easily reduce the pipe core area and reduce the cost.

Description

technical field [0001] The invention relates to the field of MEMS sensors, in particular to an inertial sensor and a manufacturing method thereof. Background technique [0002] In the control, detection and navigation systems of many moving objects, not only displacement, angular displacement, velocity and angular velocity information, but also acceleration and angular velocity information are required. Inertial sensor (including acceleration sensor and angular velocity sensor) is an instrument for testing acceleration and angular velocity. [0003] Since the late 1980s, with the development of micro-electromechanical systems (MEMS) technology, various sensors have been miniaturized, and MEMS inertial sensors based on MEMS technology have achieved mass production due to the use of MEMS processing technology. , Overcoming the shortcomings of the original inertial sensor, such as large volume and high cost, has become the main direction of future development. [0004] Bulk m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01C25/00
CPCG01C25/00
Inventor 季锋闻永祥刘琛孙伟
Owner HANGZHOU SILAN MICROELECTRONICS
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