A Method to Distinguish Intrinsic and Extrinsic Mechanisms of the Photoanomalous Hall Effect
An anomalous Hall effect and photocurrent effect technology, applied in the field of distinguishing the intrinsic mechanism and extrinsic mechanism of the anomalous photoinduced Hall effect, can solve the problem of indistinguishable contributions
Inactive Publication Date: 2018-08-17
FUZHOU UNIV
View PDF5 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
For a given system, usually both intrinsic and extrinsic mechanisms contribute to the photo-induced anomalous Hall effect, and the contributions of these two mechanisms are difficult to distinguish
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0043] The technical solution of the present invention will be specifically described below in conjunction with the accompanying drawings.
[0044] The present invention provides a method for distinguishing the intrinsic mechanism and the extrinsic mechanism of the photo-induced anomalous Hall effect, such as figure 1 shown, including the following steps:
[0045] Step S1: selecting a sphalerite semiconductor quantum well material that meets the preset conditions;
[0046] Step S2: growing two sphalerite semiconductor quantum wells with different well widths under the same growth conditions, that is, the first semiconductor quantum well and the second semiconductor quantum well;
[0047] Step S3: Measuring the photoanomalous Hall effect current and ordinary photocurrent signal of the first semiconductor quantum well and the second semiconductor quantum well respectively, and correspondingly obtaining the photoanomalous Hall conductance pair of the two semiconductor quantum we...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to a method for distinguishing the intrinsic mechanism and extrinsic mechanism of the photoinduced anomalous hall effect, and the method comprises the following steps: selecting a blende semiconductor quantum well material meeting a preset condition; generating two semiconductor quantum wells with different well widths under the same growth conditions; respectively measuring the photoinduced anomalous hall effect currents and common photocurrent signals of the two semiconductor quantum wells, and obtaining the ratios of photoinduced anomalous hall conductance to the common photocurrent signals; respectively measuring the photoinduced anomalous hall effect currents of the two semiconductor quantum wells, and correspondingly extracting the photoinduced anomalous hall effect currents caused by Rashba and Dresselhaus spin-orbit coupling; creating an equation according to the measured photoinduced anomalous hall conductance, common photoconductance and a photoinduced current effect, and solving the contribution to the photoinduced anomalous hall effect currents from the intrinsic mechanism and extrinsic mechanism. The method is simple in structure design, is easy to operate, and facilitates the popularization and application in the future.
Description
technical field [0001] The invention relates to the field of semiconductor spintronics, in particular to a method for distinguishing the intrinsic mechanism and the extrinsic mechanism of the photo-induced anomalous Hall effect. Background technique [0002] Electrons have two properties, one is spin property and the other is charge property. Since the energy required to manipulate electron spin is much smaller than that of charge, spintronics, which uses spin as an information carrier, has attracted widespread attention. Spin-orbit coupling provides a way to generate and manipulate spins via electric fields. There are two different sources of spin-orbit coupling, one is Dresselhaus spin-orbit coupling caused by bulk inversion asymmetry (BIA), and the other is structure inversion asymmetry (SIA ) induced Rashba spin-orbit coupling. The photoanomalous Hall effect provides a method to exploit the spin-orbit coupling of semiconductors to realize semiconductor spintronic devi...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
Inventor 俞金玲陈涌海程树英赖云锋郑巧
Owner FUZHOU UNIV