Memorizing unit and method based on resistive random access memory (RRAM)

A technology of resistive storage and storage unit, applied in information storage, static storage, digital storage information, etc., can solve the problem of limited process support, and achieve the effect of improving the success rate of repair and providing feasibility.

Inactive Publication Date: 2016-01-20
XI AN UNIIC SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In order to solve the technical problem that the existing eFUSE technology has limited technical support and can only be repaired once, the present invention provides a new storage unit based on the resistive memory unit RRAM, which can replace the eFUSE technology and can realize multiple memory technology for program operation

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  • Memorizing unit and method based on resistive random access memory (RRAM)
  • Memorizing unit and method based on resistive random access memory (RRAM)
  • Memorizing unit and method based on resistive random access memory (RRAM)

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Embodiment Construction

[0059]The invention is based on the RRAM unit, combined with its variable resistance characteristics, adding reference resistance circuit, sensitive amplifier, data path and other modules to realize access to data 0 and 1, replacing the eFUSE unit to realize the later repair and adjustment functions of the chip, and providing The debuggable storage strategy is applied in the repairing process of the memory chip.

[0060] Such as figure 2 It is a schematic diagram of the modules of the inventive unit, including an RRAM unit, a sensitive amplifier, a reference resistance circuit, and a data path. fuseq is the data output port, en is the data output enable, bl, sl, wl are the bit line end, the source end, the word line end of the RRAM unit.

[0061] The RRAM unit is a traditional 1T1R storage unit structure, such as Figure 3a , where rcell is a variable resistor, bl, sl, and wl are respectively the bit line end, source end, and word line end of the RRAM cell. According to the...

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Abstract

The invention relates to a memorizing unit and method based on an RRAM. The memorizing unit comprises a sensitive amplifier, a reference resistance circuit and a data path. One end of the sensitive amplifier is connected with the RRAM, the other end of the sensitive amplifier is connected with the reference resistance circuit, a q end signal and a qb end signal are induced through the sensitive amplifier according to resistance values of resistors at the two ends, the sensitive amplifier is finally in the high voltage state or the low voltage state, and locking memorizing of data is achieved. The reference resistance circuit is used for supplying a reference resistor to the sensitive amplifier. The data path is used for achieving 0-1 outputting of output data through an output port fuseq. By means of the memorizing unit and method, the technical problems that the supporting performance of an existing eFUSE technology is limited, and the limitation that only one-time repairing can be carried out exists are solved, the eFUSE technology can be replaced by the memorizing unit and method, and the memorizing technology of multi-time programming operation can be achieved. By carrying out programming operation on the RRAM unit, memorizing of layout data can be achieved, and repairing or adjusting work of a chip can be completed.

Description

technical field [0001] The invention relates to a storage unit based on a resistance variable storage unit RRAM and a storage method. Background technique [0002] With the rapid development of the information age, the development of integrated circuits is also increasing rapidly, and the design level is improving day by day. The function and logic complexity of VLSI and system-on-chip chips are also increasing. On the other hand, in order to pursue low power consumption and high integration, the manufacturing process of chips is becoming more and more complicated, which makes chips more prone to defects in the manufacturing process, especially in memory chips, which inevitably exist after leaving the factory. More or less damaged memory cells, or defective logic functions, reduce the yield rate and increase the cost of chip design and development. Therefore, in chip development, redundant units are generally added to achieve subsequent replacement of defective parts, so th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C13/00
Inventor 王小光韩小炜
Owner XI AN UNIIC SEMICON CO LTD
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