Flared laser oscillator waveguide

An expanded, waveguide technology for semiconductor diode laser applications

Inactive Publication Date: 2016-01-20
NLIGHT INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the problem of scaling to higher powers while maintaining superior brightness still poses a challenge in the field of diode lasers, especially devices that are highly multimode on the slow axis, and thus requires improvements associated therewith

Method used

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  • Flared laser oscillator waveguide
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  • Flared laser oscillator waveguide

Examples

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Embodiment Construction

[0029] Reference figure 1 , Shows a first embodiment of a wide area expansion type laser oscillator waveguide (FLOW) device (generally designated as 10) according to an aspect of the present invention. The device 10 includes a current injection region 12 for electrical pumping, the region 12 having a trapezoidal shape extending between a highly reflective rear face 14 and a partially reflective front face 16. The device 10 may have a refractive index guide area such as figure 1 A ridge or flat top structure as shown 18, or figure 1 The shape 18 shown may be gain guided. The device 10 is configured to emit a laser beam 20 from its front face 16. When the light beam 20 is emitted from the front end surface 16 of the device 10, a beam spot 21 is formed on the front end surface 16 thereof. The ridge structure (especially its active part) may be partially made of a variety of different conventional semiconductor materials that are usually grown in layers by conventional semiconduct...

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Abstract

A broad area semiconductor diode laser device includes a multimode high reflector facet, a partial reflector facet spaced from said multimode high reflector facet, and a flared current injection region extending and widening between the multimode high reflector facet and the partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:l, where n>l. The broad area semiconductor laser device is a flared laser oscillator waveguide delivering improved beam brightness and beam parameter product over conventional straight waveguide configurations.

Description

[0001] Cross references to related applications [0002] This application claims the rights and interests of the U.S. Provisional Patent Application US61 / 810,261 filed on April 9, 2013, and the entire content of the application is incorporated herein by reference for all purposes. [0003] Background of the invention [0004] 1. The technical field of the invention [0005] Generally speaking, the technical field of the present invention is semiconductor diode lasers. More specifically, the present invention relates to an expanded laser oscillator waveguide. 2. Background technology [0006] Multimode laser diodes (also known as broad-area lasers (BAL)) have the following properties: when they are driven with higher currents in order to generate higher power, their slow axis beam parameter product (BPP) and its slow axis The brightness (power÷BPP) gradually degrades. The brightness in the BAL can be improved by reducing the width of the emitter. However, the current at which the max...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/30H01S5/026
CPCH01S5/0287H01S5/1014H01S5/1203H01S5/1237H01S5/2018H01S5/2036H01S5/22H01S2301/16H01S2301/18H01S5/0651H01S5/1003
Inventor M·坎斯卡
Owner NLIGHT INC
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