3 results about "Semiconductor Diode Lasers" patented technology

The disclosed high-index-contrast single spatial mode edge-emitter semiconductor diode laser includes a substrate a ridge structure on the substrate that has an optical guiding region containing a quantum well active region sandwiched between cladding layers. An oxide may surround the ridge structure. A thickness of the optical guiding region may be less than a thickness of the cladding layers such that an empty space around the optical guiding region is maintained. Various other methods, systems, and devices are also disclosed.

The application relates to the field of semiconductor optoelectronics, and aims to solve the problems of limited spectrum bandwidth and complex perturbation system of existing semiconductor diode lasers, and provides a chaotic laser generation device based on a transistor laser collector current feedback structure, which comprises a transistor laser, an adder, a current source, a voltage source and an optical output port.The base electrode of the transistor laser is connected with the output port of the adder, the emitter electrode is connected with the negative electrode of the voltage source and the input end of the current source, the collector electrode is connected with the positive electrode of the voltage source and the first input end of the adder, and the second input end of the adder is connected with the output end of the current source.The chaotic laser signal with a standard bandwidth of 50GHz and a flatness better than 3dB can be generated, and the chaotic laser signal can be applied to the fields of chaotic synchronization and secret optical communication, high-speed random number key generation, laser radar, fiber network fault detection, ultra-wideband technology and distributed fiber sensing.

The invention discloses preparation and application of an extracellular multi-ion real-time monitoring sensor capable of being used for detecting cell damage and ion change in a recovery process, and belongs to the technical field of biosensing. The preparation method of the multi-ion real-time monitoring sensor comprises the following steps: carrying out patterning treatment on a polyimide film through a semiconductor diode laser engraving system, and engraving a carbon electrode; connecting the obtained carbon electrodes in pairs by using a conductive copper wire, bonding the carbon electrodes by using conductive silver paste, and then coating the surface of the conductive silver paste with polydimethylsiloxane to serve as a passivation layer; bonding a hollow ring body, wherein the hollow ring body intersects with all the conductive copper wires, and half of the carbon electrode is contained in the hollow inner part of the hollow ring body; and finally, modifying the carbon electrode in the hollow ring body to obtain the multi-ion real-time monitoring sensor.