42 results about "Semiconductor Diode Lasers" patented technology

Semiconductor diode lasers are phase-locked by direct current injection and combined to form a single coherent output beam. The optical power is amplified by use of fiber amplifiers. Electronically control of the optical phases of each emitter enables power efficient combining of output beams to be maintained under dynamic conditions.

A “Folded Cavity Surface Emitting Laser” (FCSEL) sum frequency generating device capable of generating a second harmonic at room temperatures with high efficiency and output power, while having a small size, low energy consumption, and a low manufacturing cost. A FCSEL sum frequency generating semiconductor diode laser has a multilayered structure that comprises a mode discriminating polyhedral shaped prism waveguide, which is located at one end of two light emitting diodes, a partial photon reflecting mirror, which is located at the opposite end of the two light emitting diodes, and a phase-matching sum-frequency generating superlattice, which is located between the polyhedral shaped prism waveguide and the partial photon reflecting mirror.

The invention relates to light sources and displays incorporating blue laser pumped light sources that provide green light. According to a first aspect of the invention, a green light source includes a semiconductor diode laser emitting light in an optical path having a dominant wavelength within the blue spectral region, a substrate positioned in the optical path of the semiconductor diode laser, and a material coupled to the substrate. The material is selected to absorb light emitted by the semiconductor diode laser and, in response, to emit light having a dominant wavelength within the green spectral region. According to a second aspect of the invention, an apparatus includes a lighting module for a display, the lighting module includes an array of red laser light sources, an array of blue laser light sources, and an array of green light sources according to the first aspect of the invention.

Semiconductor diode lasers are tiny sources of light powered by electricity. These are used extensively in medical and aesthetic applications. This patent application covers the concept of replaceable laser diodes for a wide range of applications. Historically, the high power laser sources have been prohibitively expensive to contemplate such an idea. However, as technology advances the price per Watt continues to fall dramatically. Somewhat analogous to the Gillette safety razor concept, this patent application describes how diodes can be replaced in a manner akin to the ordinary razor blade. Simply put, this invention describes replaceable laser light sources for aesthetic and medical applications.

A method of using a hand-held laser device that can simultaneously provide two or more types of low level laser therapy treatments to two or more areas of a patient's body simultaneously. The device enables laser light of different pulse repetition rates, different beam shapes and spot sizes to be applied to a patient's body. The device includes two or more laser sources. In the preferred embodiment, two semiconductor diode laser sources simultaneously provide two separate laser beams from separate probes, one laser beam producing laser light at a first pulse repetition rate and the other producing laser light at a second pulse repetition rate.

A method apparatus for sensing gases using a semiconductor diode laser spectrometer, the method comprising: introducing a sample gas into a non-resonant optical cell ( 17 ); applying a step function electrical pulse ( 19 ) to a semiconductor diode laser ( 20 ) to cause the laser ( 20 ) to output a continuous wavelength chirp for injecting ( 16 a) into the optical cell ( 17 ); injecting ( 16 a) the wavelength chirp into the optical cell ( 17 ); using the wavelength variation provided by the wavelength chirp as a wavelength scan, and detecting ( 23 ) light emitted from the cell ( 17 ), wherein a chirp rate is selected to substantially prevent light interference occurring in the optical cell ( 17 ).

The effectiveness of reflected light to stabilize the operational characteristics of a semiconductor diode laser varies with the polarization orientation of the reflected light. Stabilization failure can occur if the polarization orientation of the reflected light is orthogonal to the polarization of the light emitted by the laser source. The use of multiple reflectors can reduce the probability of stabilization failure by arranging the reflectors to return to the laser source portions of light having polarization orientations that are statistically independent with respect to each other.

Electrically conductive, embedded current injection layers are provided in combination with cladding layers to provided improved current conduction to the active light-emitting regions of semiconductor light-emitting devices. The embedded electrical contact layers are used to inject current directly into the active region of semiconductor light-emitting devices. Free-carrier loss within the cladding layers is reduced, and power efficiency is improved by eliminating voltage drops associated with current transport through the cladding layers. Moreover, use of the embedded current injection layers eliminates the need to transport current through the cladding layers thereby allowing the use of a wider range of materials for the cladding layers. The present current injection layers may be embedded in various semiconductor light-emitting devices, i.e., both edge- and surface-emitting devices, such as semiconductor diode lasers, interband cascade lasers, light-emitting diodes and vertical cavity surface-emitting lasers.

A chirped diode laser (ChDL) is employed for seeding optical amplifiers and/or dissimilar optical paths, which simultaneously suppresses stimulated Brillouin scattering (SBS) and enables coherent combination. The seed spectrum will appear broadband to suppress the SBS, but the well-defined chirp will have the coherence and duration to allow the active phasing of multiple amplifiers and/or dissimilar optical paths. The phasing is accomplished without optical path-length matching by interfering each amplifier output with a reference, processing the resulting signal with a phase lock loop, and using the error signal to drive an acousto-optic frequency shifter at the front end of each optical amplifier and/or optical path.

A multiwavelength laser system for opthalmological applications. The system including a first semiconductor diode laser including a first working beam of a first wavelength; and at least one second semiconductor diode laser having a second working beam of a second wavelength. The second wavelength being different from the first wavelength.

A cylindrical lens having a refractive optical element and a diffractive optical element is provided. The cylindrical lens can be fabricated cost effectively and precisely, and optical aberrations and defects in semiconductor diode laser arrangements can be corrected. The diffractive optical element can include various segments.

A method is disclosed for improving the functionality of a semiconductor diode laser with an extended vertical waveguide, wherein the active medium is located close to the top cladding layer of the waveguide, and the laser aims to emit light in a narrow beam with high brightness and/or to operate in the wavelength-stabilized regime. The goal is to suppress parasitic optical modes localized close to the top cladding layer of the waveguide. Unpumped sections and groves perpendicular to the stripe serve to suppress these parasitic modes. Deep (preferably a few tens of micrometers) groves parallel to the stripe suppress parasitic emission of light and the feedback in the closed lateral modes. In a tilted wave laser the longitudinal resonator can be preferably configured to have a selected length to ensure closed loops formed in the longitudinal direction by the tilted wave.

The invention provides a silicon heat sink and preparation method thereof for high-power semiconductor diode laser packaging. The silicon heat sink used for high-power semiconductor diode laser packaging comprises a silicon slice, a first silica layer, a second silica layer, a first metallization layer, and a second metallization layer. The first silica layer is made on the front side of the silicon slice. The second silica layer is made on the back side of the silicon slice. The first metallization layer is made on the first silica layer, and the first metallization layer is divided into two sections with a gap in the middle. The second metallization layer is made on the second silica layer. According to the preparation method, thermal conductivity is small, and the silicon thermal conductivity is 148W/m/DEG C, thereby the cost is lower. Meanwhile, due to the fact that silicon surface is easy to achieve a high degree of finish to form a good contact with semiconductor devices more easily, heat dispelling is better.

A semiconductor diode laser that generates light at wavelengths longer than conventional diode lasers. The laser includes a first gain element that generates a first “pump” laser beam having a first frequency and a second gain element that generates a second “pump” laser beam having a second frequency. A nonlinear frequency conversion section mixes the two beams to generate a third co-propagating optical beam at the difference frequency. To improve efficiency, the frequency conversion section is furnished with an array of charged electrodes that spatially modulate the nonlinear susceptibility and phase-match the three beams.