The disclosed high-index-contrast single spatial mode edge-emitter semiconductordiodelaser includes a substrate a ridge structure on the substrate that has an optical guiding region containing a quantum well active region sandwiched between cladding layers. An oxide may surround the ridge structure. A thickness of the optical guiding region may be less than a thickness of the cladding layers such that an empty space around the optical guiding region is maintained. Various other methods, systems, and devices are also disclosed.