Silicon heat sink and preparation method thereof for high-power semiconductor diode laser packaging

Abstract

The invention provides a silicon heat sink and preparation method thereof for high-power semiconductor diode laser packaging. The silicon heat sink used for high-power semiconductor diode laser packaging comprises a silicon slice, a first silica layer, a second silica layer, a first metallization layer, and a second metallization layer. The first silica layer is made on the front side of the silicon slice. The second silica layer is made on the back side of the silicon slice. The first metallization layer is made on the first silica layer, and the first metallization layer is divided into two sections with a gap in the middle. The second metallization layer is made on the second silica layer. According to the preparation method, thermal conductivity is small, and the silicon thermal conductivity is 148W / m / DEG C, thereby the cost is lower. Meanwhile, due to the fact that silicon surface is easy to achieve a high degree of finish to form a good contact with semiconductor devices more easily, heat dispelling is better.

Description

Technical field [0001] The invention belongs to the field of optoelectronics, and particularly refers to a silicon heat sink used for packaging high-power semiconductor lasers and a preparation method. The method relates to heat dissipation and cooling of high-power semiconductor lasers, and is mainly used to solve the problem of heat dissipation and packaging of high-power semiconductor lasers. Background technique [0002] Heat dissipation technology is an important part of the packaging technology of optoelectronics and microelectronics devices. Especially for semiconductor devices, temperature has an important influence on the forbidden band width, band edge absorption and emission bands of semiconductor materials and other physical characteristics, which is reflected in the macroscopic view. That is to say, the basic photoelectric characteristics of the device, such as power-current characteristics, spectral curves, etc., will change greatly with temperature. For example, for...

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Problems solved by technology

Because beryllium oxide ceramics have certain pollution and are harmful to the human body, aluminum nitride ceramics are generally used. Aluminum nitride ceramics are covalent compounds with a small self-diffusion coefficient, which is difficult to sinter and compact, and the existence of various defects such as impurities has a negative effect on it. The thermal conductivity has a great influence, and the thermal conductivity of the commonly used aluminum nitride ceramics is only 170W / m / ℃

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