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Power semiconductor module system and manufacturing method thereof

A technology for power semiconductors and module systems, which is used in semiconductor/solid-state device manufacturing, semiconductor devices, and semiconductor/solid-state device components, etc., and can solve problems such as increasing distance

Active Publication Date: 2019-01-22
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The mentioned problems can be overcome to a certain extent by a greater distance between the electrical connections, but this will correspondingly increase the inductance between the wires connected to the electrical connections, because at least in the The distance within the connection end area must also be increased
Increased inductance is advantageous, however, primarily in fast-switching applications, such as frequency converters, since impermissibly high induced voltages would result due to strong current changes over time

Method used

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  • Power semiconductor module system and manufacturing method thereof
  • Power semiconductor module system and manufacturing method thereof
  • Power semiconductor module system and manufacturing method thereof

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Embodiment Construction

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Abstract

The invention relates to a power semiconductor module system with a power semiconductor module and a circuit board. The power semiconductor module has a module housing, a first and a second terminal set. The first connection terminal group has first electrical connection terminals. The second connection terminal group has a second electrical connection terminal. The circuit board has first and second electrodes and is mounted to the power semiconductor module such that in the mounted state each first connection is electrically conductively connected to the first electrode and each second electrical connection is electrically conductively connected to the second electrode. The power semiconductor module system has a first and / or a second insulating carrier. In the case of a first insulating support, it is fixed to the circuit board in the unmounted state and is arranged between the first and second connection terminal groups in the mounted state. In the case of a second insulating carrier fixed to the circuit board in the unmounted state and arranged in the mounted state on the side of the circuit board opposite the power semiconductor module between the first and second connection terminal groups superior.

Description

technical field The invention relates to a power semiconductor module system with a high insulation resistance and a method for producing a power semiconductor module system with a high insulation resistance. Background technique There are often very high potential differences between the electrical connections of the power semiconductor modules, which pose a risk of voltage arcing. Sufficient creepage distances must therefore be present, the minimum length of which depends on the highest occurring potential differences and the desired degree of contamination of the surface of the modules lying in line with the connections. Prolonging creepage distances by suitable measures in semiconductor modules is known in principle, but mounting circuit boards on top of power semiconductor modules would cause impermissibly high leakage currents or even lead to plate voltage arc. A planar printed circuit board, for example, again shortens creepage distances that exist, for example, on ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/48H01L21/60
CPCH01L23/04H01L2924/0002H05K1/18H05K3/306H05K2201/10166H05K2201/10303H05K2201/2036H05K1/0256H05K2201/0761H05K2201/09036H01L2924/00H05K1/181H05K3/30
Inventor R·拜雷尔
Owner INFINEON TECH AG