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Back-lit semiconductor structure with semiconductor capacitor connected to floating diffusion

A floating diffusion area and semiconductor technology, applied in radiation control devices, etc., can solve the problems of signal-to-noise ratio reduction, reduction of equivalent capacitance value, etc.

Active Publication Date: 2018-06-29
PIXART IMAGING INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, reducing the area of ​​the floating diffusion region will also reduce its equivalent capacitance, resulting in a decrease in the signal-to-noise ratio

Method used

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  • Back-lit semiconductor structure with semiconductor capacitor connected to floating diffusion
  • Back-lit semiconductor structure with semiconductor capacitor connected to floating diffusion
  • Back-lit semiconductor structure with semiconductor capacitor connected to floating diffusion

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Embodiment Construction

[0022] The following description contains embodiments of the present invention in order to understand how the present invention can be applied to actual situations. It should be noted that in the following drawings, the parts irrelevant to the technology of the present invention have been omitted. At the same time, in order to highlight the relationship between the components, the ratio between the components in the drawings is not the same as the ratio between the real components. Must be the same.

[0023] Please refer to figure 1 As shown, it depicts a schematic diagram of the present invention. The backlight-sensitive semiconductor structure 10 has a substrate 101 , a photo-sensing region 102 , a floating diffusion region 103 , a blocking region 104 , a transfer gate 105 and a semiconductor capacitor 106 ; wherein the substrate 101 has a photosensitive surface for receiving incident light. The photo-sensing area 102 is located inside the base body 101 for receiving light...

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Abstract

The present invention is a back-sensitive semiconductor structure with a semiconductor capacitor connected to the floating diffusion region, which can reduce the area of ​​the floating diffusion region by arranging a semiconductor capacitor above the floating diffusion region, and reduce the impact of incident light on the floating diffusion region when illuminated. influence, and can enhance the light collection efficiency.

Description

technical field [0001] The present invention relates to a photosensitive semiconductor structure, and more particularly to a backside photosensitive semiconductor structure with a semiconductor capacitor connected to a floating diffusion region. Background technique [0002] In the prior art, the back-sensing semiconductor structure must have a floating diffusion region large enough to store the charge through the equivalent capacitive effect of the floating diffusion region after the light-sensing region of the photosensitive element is exposed to light to generate charges. [0003] However, in the back photosensitive semiconductor structure, since the floating diffusion area is also within the irradiation range of the incident light, unlike the front photosensitive semiconductor structure, which has a shielding structure such as a metal layer, the floating diffusion area may also be affected by the incident light. The photoelectric reaction is generated under the influence...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/144
Inventor 陈经纬颜文正
Owner PIXART IMAGING INC