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Flexible thin film transistor and its manufacturing method

A flexible thin film and manufacturing method technology, applied in the direction of transistors, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of increasing the protection ability of the insulating layer and reducing the damage of the inorganic insulating layer, so as to avoid abnormal conduction and improve short circuit Problems, Effects of Enhanced Protection

Active Publication Date: 2020-04-14
EVERDISPLAY OPTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Aiming at the defects existing in the existing flexible thin film transistors, the inventor, after long-term in-depth research, added an organic conductive layer on top of the existing inorganic insulating layer to play an effective buffering role, thereby increasing the protective ability of the insulating layer and reducing the inorganic Risk of breakage of the insulation due to external pressure

Method used

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  • Flexible thin film transistor and its manufacturing method
  • Flexible thin film transistor and its manufacturing method

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Embodiment Construction

[0057] The technical solutions of the present invention will be further described below according to specific embodiments. The protection scope of the present invention is not limited to the following examples, which are listed for illustrative purposes only and do not limit the present invention in any way.

[0058] figure 1 It is a structural schematic diagram of the flexible thin film transistor of the present invention, such as figure 1 As shown, the flexible thin film transistor includes: a flexible substrate 101; a gate 102 disposed on the flexible substrate 101; an inorganic insulating layer 103 disposed on the gate 102; an organic conductive layer 104 disposed on the inorganic insulating layer 103 and a source / drain electrode 105 disposed on the organic conductive layer 104 . However, the flexible thin film transistor of the present invention is not limited to the above structure, and may include other layers of known thin film transistors such as active semiconducto...

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Abstract

The invention provides a flexible thin film transistor and a manufacturing method thereof. The flexible thin film transistor comprises: a flexible substrate; a grid electrode arranged on the flexible substrate; an inorganic insulating layer arranged on the grid electrode; an organic conductive layer arranged on the inorganic insulation layer; and a source / drain electrode arranged on the organic conductive layer. The flexible thin film transistor provided by the invention can reinforce the protective capability of the inorganic insulation layer, and the organic conductive layer can effectively play a buffer effect to avoid abnormal breakover of the grid electrode and the source / drain electrode and perfect the short circuit problem, so as to improve the stability of the flexible thin film transistor.

Description

technical field [0001] The invention relates to a thin film transistor, in particular to a flexible thin film transistor and a manufacturing method thereof. Background technique [0002] TFT-LCD is widely used in various large, medium and small size products due to its advantages of thin size, light weight, excellent picture quality, low power consumption, long life, digitalization and no radiation, almost covering today's information The main electronic products of society, such as TV, computer (desktop and notebook), mobile phone, PDA, GPS, vehicle display, instrumentation, public display and virtual display, etc. Due to a large amount of human, material and financial resources invested globally, a huge market size has been formed at present. [0003] Thin film transistor refers to depositing a layer of semiconductor thin film on the substrate, and making the source, drain, gate and tube body through photolithography, etching and other technologies. It consists of gate in...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L21/336
Inventor 陈郁仁
Owner EVERDISPLAY OPTRONICS (SHANGHAI) CO LTD
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