Method of etching grating groove by rotating etching angle

A technology of grating grooves and angles, applied in diffraction gratings, optics, optical components, etc., can solve the problem that the processing method is not suitable, and achieve the effect of improving efficiency

Active Publication Date: 2016-02-17
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For special groove structures with special requirements on diffraction efficiency, such as sinusoidal grooves, arc grooves and triangular grooves, the existing processing methods are not suitable

Method used

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  • Method of etching grating groove by rotating etching angle
  • Method of etching grating groove by rotating etching angle
  • Method of etching grating groove by rotating etching angle

Examples

Experimental program
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Effect test

Embodiment

[0047] Before the specific embodiment, the idea of ​​this method is introduced: relying on the blocking effect of the photoresist at a certain etching angle, the etched area at the bottom of the groove changes with the etching angle. By controlling the etched time under the corner, that is, controlling the etched depth of the groove bottom, a certain groove shape can be obtained.

[0048] Given some preconditions of this method, in the actual etching process, those in the related field should know that the two variables most related to the etching groove type are the etching angle and the etching rate. The etching angle determines the effective etching area of ​​the bottom of the etched groove each time, and the etching rate determines the depth of the bottom of the etched groove under a certain etching angle and a certain etching time.

[0049] Simplify the relationship between etching rate and etching angle under certain conditions:

[0050] E. r =E r0 cosθ,

[0051] E in ...

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PUM

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Abstract

The invention discloses a method of etching a grating groove by rotating an etching angle. The method comprises steps: design grating groove parameters such as a groove width, a groove depth and a groove shape are loaded; ion beam etching machine parameters such as an etching speed and an etching ratio are initialized; grating parameters such as a grating line density, an initial grating phtoresist thickness and a grating duty ratio are initialized; a preset groove is cut, and the number of etching angles is determined; an etching angle is determined; the etching time is determined; the etching parameters are optimized, and whether normalized root mean square deviation of the etching result achieves a preset requirement is judged; if the preset requirements is not achieved, the number of etching angles is increased until the normalized root mean square deviation of the etching result meets an actual requirement; and if the preset requirements is achieved, processing is carried out according to calculation parameters. By adopting the method of the invention, the optimal processing parameters for the design groove can be acquired quickly.

Description

technical field [0001] The invention relates to the field of grating groove etching, in particular to a method for controlling the grating groove under ion beam etching. Background technique [0002] Gratings with special grooves have a wide range of uses. Special slot gratings include sinusoidal gratings, blazed gratings, and more. Traditional methods for making special grating grooves include ion beam etching at a fixed angle, mechanical scribing, and wet etching along the crystal direction of Si. [0003] Among the traditional dry etching methods, ion beam etching is the most widely used due to its advantages of good etching uniformity, high etching efficiency and suitable for large-area processing. The existing processing methods are not suitable for special groove structures with special requirements on diffraction efficiency, such as sinusoidal grooves, arc grooves and triangular grooves. [0004] The invention proposes a method for etching the grating groove by rot...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/18
CPCG02B5/18G02B5/1857
Inventor 曾思为吴丽翔邱克强刘正坤付绍军
Owner UNIV OF SCI & TECH OF CHINA
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