Semiconductor structures and methods of forming them
A technology of semiconductor and gate structure, applied in the field of semiconductor structure and its formation, can solve the problems of reduced operating speed of semiconductor devices, large influence of MOS transistor performance, large contact resistance, etc., and achieve the effect of reducing the Schottky barrier
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0030] As mentioned in the background art, the contact resistance of the transistor formed in the prior art needs to be further reduced. Since the contact resistance between the source and drain of the transistor and the metal plug accounts for the main part of the contact resistance of the transistor, it can be further reduced by The contact resistance between the source drain and the metal plug is used to reduce the contact resistance of the transistor.
[0031] Studies have found that when the metal silicide layer is directly formed on the surface of the source and drain, due to the low resistance of the metal silicide layer and the small work function difference with the source and drain, the metal silicide layer and the source and drain There is a lower Schottky barrier between them, so that the contact resistance between the metal silicide layer and the source and drain can be reduced. However, in actual devices, the surface of the source and drain has many defects, such...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com