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A wafer passivation process

A wafer and process technology, which is applied in the field of passivation technology of PN junction of automobile chips, can solve the problems of poor densification performance and reduce product quality, and achieve the effects of improving quality, increasing growth speed and increasing thickness

Active Publication Date: 2018-05-15
扬州杰利半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can suppress the occurrence of slip dislocations and cracks, etc., and perform efficient thermal oxidation film formation; however, it can reach a corresponding thickness, but its compactness is poor, which reduces the quality of the product

Method used

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  • A wafer passivation process
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  • A wafer passivation process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Example 1: Primary oxidation at 1100℃, time is 0.5h, single-layer oxide film thickness is 1000 angstroms; secondary oxidation at 1100℃, time is 3h, single-layer oxide film thickness is 8000 angstroms; tertiary oxidation is 1100℃, time is 0.5 h, the thickness of the single-layer oxide film is 1000 angstroms;

Embodiment 2

[0033] Example 2: Primary oxidation at 1150℃, time is 1.5h, single-layer oxide film thickness is 2000 angstroms; secondary oxidation at 1150℃, time is 8h, single-layer oxide film thickness is 16000 angstroms; tertiary oxidation is 1150℃, time is 1.5 h, the thickness of the single-layer oxide film is 2000 angstroms.

[0034] The oxygen flow rates in steps S2, S3 and S4 are all 6 liters / min, which ensures uniform oxygen and improves the processing reliability of the product.

[0035] Such as image 3 As shown, it also includes the following steps:

[0036] S7, secondary yellow light; followed by photoresist, soft baking, exposure, developing and hard baking;

[0037] a. Upper photoresist: Coat a layer of photoresist on the surface of the wafer; b. Soft baking: The solvent evaporates and the adhesive film dries, which increases the adhesive force of the adhesive. Due to the drying of the adhesive film, the film will not be damaged during exposure; c. Exposure :Part of the photoresist in...

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PUM

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Abstract

The invention provides a wafer passivation technology, and relates to a novel PN node passivation technology for an automobile chip. The technology provides convenience for processing, improves the quality of products and prolongs the service life of the products. A wafer with open grooves in the front side is taken as a raw material. The technology comprises the following steps of S1) cleaning and drying; S2) first oxidation; S3) second oxidation; S4) third oxidation; S5) cooling; and S6) growth of an oxide film passivation layer of the wafer. The wafer is oxidized for three times, the first oxidation can improve the quality of a grown oxide film, the second oxidation can increase the thickness of the oxide film, and the third oxidation can be used to grow an oxide film of compact thickness and with a good blocking effect, and the thick and compact oxide film can be formed via oxidation for three times, and the quality of the product is improved; twice yellow light illumination is carried out according to a normal procedure, a BOE solution is used to remove the oxide film and implement metallization, and the product is thus produced; and the service life of the product is prolonged, and the reliability of the product is improved.

Description

Technical field [0001] The present invention relates to the technical field of passivation treatment, in particular to a new type of passivation process for the PN junction of automobile chips. Background technique [0002] With the increasingly fierce competition in the semiconductor market, having first-class testing technology and ensuring product quality is a must-have tool for every semiconductor discrete device manufacturer. Therefore, in order to ensure the reliability of automotive chips, a highly reliable automobile Chip products are of great significance. [0003] At present, automobile chip products generally use glass to passivate the PN junction of the chip. Due to the difference in thermal expansion coefficient between glass and chip, and the glass is very brittle; in the harsh environment of automobile chip use, in extremely cold and extremely hot environments It is easy to cause glass cracking during temperature conversion, resulting in a decline in product quality...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/316
CPCH01L21/02164H01L21/022H01L21/02238
Inventor 游佩武裘立强王毅
Owner 扬州杰利半导体有限公司