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A Method for Reducing Metal Contamination in Working Area of ​​Contact Image Sensor

An image sensor and work area technology, applied in semiconductor devices, electric solid state devices, semiconductor/solid state device manufacturing, etc., can solve the problems of wafer metal contamination and contact image sensor work area metal contamination.

Active Publication Date: 2019-01-04
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The technical problem to be solved by the present invention is to provide a method that can solve the problem of metal contamination of the wafer caused by the etching process of the etching chamber on the working area in view of the above-mentioned defects in the prior art, thereby reducing the contact image Methods for Metal Contamination in the Sensor Work Area

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  • A Method for Reducing Metal Contamination in Working Area of ​​Contact Image Sensor
  • A Method for Reducing Metal Contamination in Working Area of ​​Contact Image Sensor
  • A Method for Reducing Metal Contamination in Working Area of ​​Contact Image Sensor

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[0021] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.

[0022] Figure 1 to Figure 6 The figure to figure schematically shows various steps of the method for reducing metal pollution in the working area of ​​the contact image sensor according to the preferred embodiment of the present invention.

[0023] Such as Figure 1 to Figure 6 As shown in the figure, the method for reducing metal pollution in the working area of ​​a contact image sensor according to a preferred embodiment of the present invention includes performing the following steps in sequence:

[0024] A semiconductor structure is provided, wherein a silicon oxide layer 2 and a silicon nitride layer 3 are sequentially arranged on a silicon substrate 1; on the basis of the structure, etching of the working area is performed, and the etching...

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Abstract

The invention provides a method to reduce metal pollution in a work area of a contact-type image sensor. The method comprises that work area etching, which etching of a pixel area and partial etching of a logic control area, is implemented; a wafer is cleaned subsequently after work area etching; a high-compactness oxide layer is grown in an in-situ steam generation technology to oxidize the surface of the cleaned wafer; a photoresist covers the portion, where the high-compactness oxide layer is grown, of the pixel area, and the logic control area is etched; the photoresist is removed from the wafer; and the high-compactness oxide layer is removed.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, and more specifically, the invention relates to a method for reducing metal pollution in a working area of ​​a contact image sensor. Background technique [0002] CIS (Contact Image Sensor) is a photoelectric conversion device that uses a row of built-in LED light-emitting diodes for illumination. Because of its small size and light weight, it is widely used in mobile devices such as smartphones with camera functions middle. [0003] The camera function of this kind of contact sensor is particularly sensitive to the increase of leakage and white spots caused by metal pollution, especially the pollution of the work area, which leads to low yield and even scrapping of a large number of wafers. [0004] Specifically, while contact sensors are used more and more widely, there are some problems as follows: [0005] 1) Contact sensors are extremely sensitive to metal pollution, especially h...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146H01L21/02
CPCH01L21/02068H01L27/14685
Inventor 许进唐在峰陈敏杰任昱吕煜坤
Owner SHANGHAI HUALI MICROELECTRONICS CORP