A blue-green light-emitting diode chip manufacturing process

Abstract

The invention provides a blue and green light emitting diode chip manufacturing process. The process comprises the steps of growing an unintentionally doped layer, a first n-type conducting layer, a first current blocking layer, a first n-type contact layer, a second current blocking layer, a second n-type contact layer, a third current blocking layer, a second n-type conducting layer, an active area, a limiting layer, a p-type conducting layer and a p-type contact layer on a substrate successively; performing masking, photo-etching and ICP etching on the p-type contact layer up to the n-type conducting layer; performing masking and photo-etching on the exposed second n-type conducting layer and etching through the third current blocking layer by using ICP to expose the surface of the second n-type contact layer; performing masking and photo-etching again on the exposed surface of the second n-type contact layer and etching through the second current blocking layer by using ICP to expose the surface of the first n-type contact layer; performing masking and photo-etching on the p-type contact layer, and forming an ITO conducting layer on the exposed p-type contact layer through evaporation; manufacturing a p electrode and an n electrode. The blue and green light emitting diode chip manufacturing process can improve the current spreading effect and improve the light emitting efficiency of light emitting diodes.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a blue-green light-emitting diode chip manufacturing process. Background technique [0002] Light-emitting diodes have been rapidly developed as the main light source due to their low power consumption, small size, and high reliability. Especially in the past ten years, the field of utilization of light-emitting diodes is expanding rapidly. Improving brightness and reducing the cost of light-emitting diodes have become the goals of the development of the LED field. [0003] In the prior art, the blue-green light-emitting diode chip includes a p-region, an n-region and an active region. The active region is arranged between the p-region and the n-region, and a p-electrode is arranged on the conductive layer of the p-region. The n region includes setting an unintentionally doped layer on the substrate, setting an n-type conductive layer on the unintentionally doped ...

AI Technical Summary

Problems solved by technology

[0005] First, the single-layer n-type conductive layer is in contact with the n-electrode, making the thickness of the n-type conductive layer thicker, prolonging the epitaxial production time and reducing production efficiency

[0006] Second, the single-layer n-type conductive layer is in contact with the n-electrode, and the ohmic contact with the n-electrode cannot be gradually changed by changing the epitaxial material or doping, so that the current spreading effect is poor, and the luminous efficiency of the diode is low.

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