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A kind of ito target layout method

A layout method and target technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of target surface cracking, high replacement cost, high damage stress, etc., and reduce stress concentration. phenomenon, the effect of improving the utilization rate and increasing the service life

Active Publication Date: 2017-11-07
EAGLES MEN AERONAUTIC SCI & TECH GRP
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, since the indium (In) and tin (Sn) materials in the ITO target are rare and expensive materials, during the magnetron sputtering process, the accelerated ions are used to bombard the surface of the target, which will generate high destructive stress, making the target The surface of the target material is prone to cracks, and once the target material cracks, it needs to be replaced immediately to ensure the quality of the coating, and the cost of replacement is huge

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  • A kind of ito target layout method
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  • A kind of ito target layout method

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Embodiment Construction

[0024] The invention provides an ITO target layout method. See Figure 4 , the specific steps of the method are as follows:

[0025] Step 1: Process the original backplane to complete a long circular runway groove;

[0026] Step 2: Process the original large-sized regular cuboid target into a small-sized oblique cuboid target with a predetermined inclination angle (5-10°);

[0027] Step 3: Process the long circular runway long straight track and the semicircular track at the junction of one side with a small angle, and the other side is a vertical trapezoidal target;

[0028] Step 4: Process the semicircular target.

[0029] Step 5: Install the small-sized oblique cuboid target, trapezoidal target and semicircular target on the newly processed back plate with a long circular runway groove, leaving a predetermined gap between the oblique cuboid targets. The gap size is the sin (inclination angle value) of the target thickness.

[0030] The original target backplane is a re...

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Abstract

Provided is a novel indium tin oxide (ITO) target layout method. The method comprises the five steps that firstly, an original back plate is machined, and a long ring-shaped runway groove is formed; secondly, an original large-sized regular cuboid target is machined into small-sized inclined cuboid targets with the preset inclination angle being 5-10 degrees; thirdly, trapezoid targets at the joints of long straight tracks and semicircular tracks of a long ring-shaped runway are machined, one surface of each trapezoid target has a small angle, and a vertical body is located on the other surface of each trapezoid target; fourthly, semicircular targets are machined; and fifthly, the small-sized inclined cuboid targets, the trapezoid targets and the semicircular targets are mounted on the machined back plate with the long ring-shaped runway groove, predetermined gaps are reserved between the mounted inclined cuboid targets, and the size of each gap is equal to the sin inclination angle value of the thickness of the targets. Raw materials are saved while the quality of coating films is guaranteed; moreover, the service life of the targets is prolonged.

Description

technical field [0001] The invention belongs to the technical field of stealth coating, and in particular relates to an ITO target material layout method. Background technique [0002] The scope of research on transparent conductive oxide thin films is very wide, and there are many kinds of materials, but they mainly focus on In 2 o 3 with SnO 2 As well as the field of mixing with other oxides, in terms of light transmittance, the flat panel display requires the higher the light transmittance, the better, while the solar cell industry must meet the light transmittance and thermal stability of the full range of sunlight. . On the other hand, the resistivity of the film needs to be small to maintain good conductivity. In general, when the optical transmittance of the film is >80%, the resistivity ρ<10 -4 Ω is a good transparent conductive film. ITO has energy gap Eg=3.5-4.3eV, visible light transmittance at 550nm wavelength is more than 85%, infrared reflectivity i...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C23C14/08
CPCC23C14/086C23C14/3407
Inventor 张丽娇马良
Owner EAGLES MEN AERONAUTIC SCI & TECH GRP