Static random access memory and data writing-in method and input and output circuits thereof

Abstract

A static random access memory and a data writing-in method and input and output circuits thereof are disclosed, the method is as follows: detecting that a gating signal line is selected, wherein the gating signal line distinguishes writing-in and reading-out; according to the selected gating signal line, selecting a bit line corresponding to the selected gating signal line; respectively connecting a control circuit connecting line forward direction and a control circuit connecting line reverse direction by the selected bit line; according to the data to be written, changing the voltage of the control circuit connecting line forward direction or the control circuit connecting line reverse direction; amplifying a voltage difference between the control circuit connecting line forward direction and the control circuit connecting line reverse direction to a power source voltage by a sense amplifier; and writing data outputted by the sense amplifier in a destination storage unit of a memory cell array by the selected bit line. The rate of reuse of various components of a circuit is higher in the writing-in and reading-out process of the static random access memory, writing-in and reading-out can be achieved by one same circuit, and the space occupied by input and output circuits can be reduced.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a static random access memory, a data writing method thereof, and an input and output circuit. Background technique [0002] Random access memory (Random Access Memory, RAM) can be divided into static random access memory (Static Random Access Memory, SRAM) and dynamic random access memory (Dynamic Random Access Memory, DRAM). Among them, as long as the SRAM is powered on, the data stored in it can be saved without periodic update, and the writing and reading speeds are much faster than the DRAM. But its integration level is low, each storage unit of DRAM needs only one transistor and a small capacitor, and each storage unit of SRAM needs two to ten transistors (mainstream is six or eight) Plus some related circuits. Therefore, in the case of the same capacity, SRAM generally takes up more space than DRAM. How to reduce the space occupation of SRAM has always been ...

AI Technical Summary

Problems solved by technology

At this time, in order to avoid occupying the wiring space of the surrounding input and output circuits, the height of the circuit can only be increased, which eventually leads to an increase in the height of the entire SRAM

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