Silicon carbide pin buried layer structure isotope cell using alpha radiation source and manufacturing method thereof

Abstract

The invention discloses a silicon carbide PIN buried-layer structure isotope battery using alpha radioactive sources and a manufacturing method thereof. The invention aims to improve the energy conversion efficiency, the packaging intensity, the integrity, and the practicability. The battery includes a SiC substrate, a first N-type SiC epitaxial layer, a P-type SiC epitaxial layer, and a second N-type SiC epitaxial layer that are sequentially arranged from the bottom to the top, a plurality of steps are arranged on the second N-type SiC epitaxial layer, a groove is arranged between the adjacent steps, the bottom of the groove extends to the P-type SiC epitaxial layer, grooves are arranged in the middle positions of the top parts of the plurality of steps, an N-type SiC ohm contact doping area is arranged in the grooves, the upper end of the N-type SiC Ohm contact doping area is provided with an N-type ohm contact electrode, the N-type ohm contact electrode is same to the N-type SiC Ohm contact doping area in shape, the alpha radioactive sources are arranged at the top positions of the steps at the two sides of the N-type ohm contact electrode, and the bottom of the groove between the adjacent steps is provided with a P-type ohm contact electrode which is contacted with the P-type SiC epitaxial layer.

Description

Technical field [0001] The present invention relates to the technical field of semiconductor devices and semiconductor processes, in particular to a silicon carbide PIN buried-layer structure isotope battery using an alpha radiation source and a manufacturing method thereof. Background technique [0002] The isotope battery uses semiconductor diodes as energy conversion elements, and uses the ionization effect of charged particles generated by the decay of radioisotopes in semiconductor materials to convert nuclear radiation energy into electrical energy. In order to obtain a sufficiently high and long-term stable output power to accelerate its practical use, it is necessary to optimize the design from both the transducer element and the radiation source. [0003] In terms of radioactive sources, most of the current low-energy beta radioactive sources (such as 63Ni, average particle energy 17.1KeV) are used as energy sources, and their electron flux density is low; at the same time...

AI Technical Summary

Problems solved by technology

Due to the deep range of α particles and the concentrated release of energy near the range, it is difficult for the radiation-generated carriers in the deep part of the material to fully absorb

At the same time, a thick epitaxial layer will also lead to a large series resistance of the device, thereby affecting the conversion efficiency

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