A kind of semiconductor device and its manufacturing method and electronic device

Abstract

The invention discloses a semiconductor device, a manufacturing method thereof and an electronic device. A hard mask layer is formed on a semiconductor substrate; the hard mask layer and the semiconductor substrate are etched; and in the shallow trench Filling the isolation material layer; removing the hard mask layer to expose the semiconductor substrate; forming a tunnel oxide layer on the exposed semiconductor substrate; forming a first floating gate material layer on the semiconductor substrate ; Forming a sacrificial layer on the semiconductor substrate; removing the first floating gate material layer that is not covered with the sacrificial layer; removing the sacrificial layer; using an epitaxial growth process on the first floating gate material layer A second layer of floating gate material is formed. The manufacturing method according to the present invention provides a good process window for the formation of the shallow trench isolation structure oxide layer and floating gate polysilicon; the outline of the floating gate is well controlled; the physical outline of the floating gate has It is beneficial to improve the device coupling rate.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] Memory is used to store a large amount of digital information. According to recent surveys, memory chips account for about 30% of semiconductor transactions worldwide. Over the years, technological progress and market demand have resulted in more and more high-density various type memory. [0003] Random access memory, such as DRAM and SRAM (static random access memory), has the problem of data loss after power failure during use. To overcome this problem, various nonvolatile memories have been designed and developed. Recently, flash memory based on floating gate concept has become the most general non-volatile memory due to its small cell size and good performance. [0004] Flash memory is FLASH, which has become the mainstream of non-volatile semiconductor s...

AI Technical Summary

Problems solved by technology

[0006] The chemical mechanical polishing process of the floating gate will result in a poor loading effect between the flash memory cell area (dense) and the ISO / PAD area (charge pump layout structure)

The bottleneck caused by the thinner floating gate polysilicon layer in the PAD area will cause damage to the active area

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