A high sustaining voltage esd protection device with pmos triggering ldmos-scr structure

Abstract

The invention provides a high-maintaining voltage ESD protection device with a PMOS-triggered LDMOS-SCR structure. The high-maintaining voltage ESD protection device can be applied to an on-chip IC high-voltage ESD protection circuit, and mainly comprises a P substrate, an N well, a P well, a first P+ injection region, a second P+ injection region, N+ injection regions, a third P+ injection region, a fourth P+ injection region, a metal anode, a metal cathode, polysilicon gates, thin-gate oxidation layers and a plurality of field-oxide isolation regions. According to the ESD protection device with the LDMOS-SCR structure, under the high-voltage ESD pulse action, on one hand, a PMOS discharge path comprising the third P+ injection region, the second polysilicon gate, the thin-gate oxidation layer covered by the second polysilicon gate, the N well and the fourth P+ injection region improves the maintaining voltage of the device and reduces a trigger voltage of the device; and on the other hand, the fourth P+ injection region, the N well, the P well and the second P+ injection region form an ESD current discharge path with a PNPN structure, so that a secondary failure current of the device is improved; and the ESD robustness of the device is strengthened.

Description

technical field [0001] The invention belongs to the field of electrostatic discharge protection of integrated circuits and relates to a high-voltage ESD protection device, in particular to a high-maintenance-voltage ESD protection device with a PMOS-triggered LDMOS-SCR structure, which is used to improve the reliability of on-chip IC high-voltage ESD protection. Background technique [0002] In people's daily life, electrostatic phenomena (ESD) are ubiquitous. And with the rapid development of integrated circuits, electrostatic discharge has become an increasingly serious threat to the reliability of electronic product systems during the production, packaging, testing, storage, and transportation of integrated circuits. The failure of integrated circuit products caused by electrostatic discharge has become an electronic One of the most important factors in the decline of product system reliability. On the other hand, with the rapid development of power integrated circuit te...

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Problems solved by technology

[0004] In view of the ubiquitous problems of low sustaining voltage and insufficient latch-up resistance in existing high-voltage ESD protection devices, an example of the present invention designs a high-maintaining voltage ESD protection device with a PMOS-triggered LDMOS-SCR structure, which not only makes full use of The characteristics of the strong current discharge capability of the LDMOS-SCR device, and the strong voltage clamping capability of the embedded PMOS structure

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