Gallium nitride-based LED epitaxial structure

Abstract

The invention relates to a gallium nitride-based LED epitaxial structure, and belongs to the technical field of epitaxial growth of nitride semiconductor light-emitting devices. The gallium nitride-based LED epitaxial structure comprises a GaN buffer layer, a uGaN layer, an n-type GaN:Si layer, an InGaN / GaN multi-quantum well layer, a p-type AlGaN electron blocking layer and a p-type GaN:Mg layer, which sequentially grow on a substrate layer; and the gallium nitride-based LED epitaxial structure is characterized in that a low-temperature p-type InAlGaN layer which is 5-100nm in thickness is inserted between the InGaN / GaN multi-quantum well layer and the p-type AlGaN electron blocking layer. The low-temperature p-type InAlGaN layer is inserted between the InGaN / GaN multi-quantum well layer and the p-type AlGaN electron blocking layer; the growth temperature is 600-900 DEG C; and previously grown InGaN / GaN multi-quantum well layer is not destroyed, so that the influence on the light-emitting efficiency of a light-emitting diode is avoided.

Description

technical field [0001] The invention relates to the technical field of epitaxial growth of nitride semiconductor light-emitting devices, in particular to a gallium nitride-based LED epitaxial structure. Background technique [0002] With the improvement of luminous efficiency and the reduction of manufacturing cost of semiconductor light-emitting chips, semiconductor light-emitting chips have been widely used in fields such as backlight, display and lighting. [0003] In order to enable LEDs to be used in different fields, especially outdoor lighting in harsh environments, higher requirements are put forward for the reliability of LEDs, especially the antistatic ability characterized by reverse breakdown voltage. At present, although the luminous efficiency of LED is far greater than that of other light sources, it is still lower than its theoretical maximum value. Obviously, if the luminous efficiency and antistatic ability can be improved by improving the epitaxial struct...

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Problems solved by technology

The main reason is that the p-type AlGaN electron blocking layer must be grown above 1000°C, while the growth temperature of the active light-emitting layer InGaN / GaN multiple quantum wells is 700°C to 850°C, so when the growth of the active light-emitting layer is completed, the temperature rises to When the temperature is above 1000°C, the multi-quantum well structure grown at low temperature will be destroyed, thereby affecting the luminous efficiency of light-emitting diodes; again, due to the high growth temperature of p-type AlGaN and the rapid increase of the diffusion coefficient of Mg at high temperatures, Therefore, during the high-temperature growth process of the p-type AlGaN electron blocking layer, Mg will inevitably diffuse into the InGaN / GaN multi-quantum well active region below it, which will have a serious impact on the light-emitting diode.

It is obvious that the commonly used GaN-based LED epitaxial structures have inherent defects

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