Self-rectification memory unit structure of resistance random access memory

Abstract

The invention provides a self-rectifying memory unit structure of the resistance random access memory (RRAM). The memory unit structure of the RRAM comprises a first electrode, an insulator-metal-transition material (IMT material) layer arranged on the first electrode, a barrier layer arranged on the IMT material layer, and a second electrode arranged on the barrier layer, wherein the IMT material layer is spaced from the second electrode by the barrier layer. With the self-rectifying memory unit structure, the reliability of the RRAM can be improved.

Description

technical field [0001] The present invention relates to a memory device, in particular to a resistive random access memory. Background technique [0002] Designers are looking for next-generation nonvolatile memories, such as magnetoresistive random access memory, phase change random access memory, conductive bridge random access memory and resistive random access memory (hereinafter referred to as RRAM), to increase write speed and reduce power consumption. Among the above types of non-volatile memories, RRAM has a simple structure, has a simple interleaved array and can be manufactured at low temperature, low power consumption, low operating voltage, short write and erase time, long endurance, and long storage time , non-destructive reading, multi-state storage, simple component process and scalability, so it has become the mainstream of emerging non-volatile memories. The basic structure of the existing resistive non-volatile memory is a metal-insulator-metal (metal-ins...

AI Technical Summary

Problems solved by technology

Among the above memory cell structures, the 1BJT1R structure and 1T1R structure are too complex and require high-temperature processes to be less suitable, and the complementary resistance switching element (CRS) memory cell structure also has the problem of destructive readout

Images