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reactive sputtering device

A sputtering device and reactive technology, applied in the field of reactive sputtering devices

Active Publication Date: 2018-06-22
ULVAC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, when the above-mentioned variation occurs in the IGZO film serving as the channel layer, the operation of each of the plurality of thin film transistors varies within the plane of the substrate.

Method used

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Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0054] refer to Figure 1 to Figure 6 A first embodiment of the sputtering device will be described. The overall structure of the sputtering device, the structure of the sputtering chamber, the structure of the cathode unit and the function of the sputtering chamber will be described in sequence below. In addition, a case where the compound film formed on the substrate is an indium gallium zinc oxide film (IGZO film) will be described below as an example of a sputtering device.

[0055] [Overall configuration of the sputtering device]

[0056] refer to figure 1 The overall configuration of the sputtering device will be described.

[0057] Such as figure 1 As shown, in the sputtering apparatus 10 , the loading / unloading chamber 11 , the preprocessing chamber 12 , and the sputtering chamber 13 are arranged along the conveying direction as one direction. Each of the three chambers is connected to other adjacent chambers through gate valves 14 . Each of the three chambers ...

no. 2 Embodiment approach

[0117] refer to Figure 7 A second embodiment of the sputtering device will be described. The sputtering device of the second embodiment differs from the sputtering device of the first embodiment in the number of targets included in the cathode unit 22 . Therefore, such differences will be described in detail below. In addition, in Figure 7 , for the previously described image 3 The components shown that are the same are denoted by the same reference numerals. In addition, in Figure 7 A state in which the cathode unit 22 is arranged at the start position St is shown in .

[0118] [Configuration of Cathode Unit 22 ]

[0119] refer to Figure 7 The configuration of the cathode unit 22 will be described.

[0120] Such as Figure 7 As shown, the cathode unit 22 has a first cathode 22A and a second cathode 22B. The first cathode 22A and the second cathode 22B each include a target 23 , a back plate 24 , a magnetic circuit 25 , and a magnetic circuit scanning unit 29 . ...

no. 3 Embodiment approach

[0131] refer to Figure 8 to Figure 10 A third embodiment of the sputtering device will be described. In addition, the sputtering device of the third embodiment differs from the sputtering device of the first embodiment in the number of cathode units included in the sputtering chamber 13 . Therefore, such differences will be described below.

[0132] [Configuration of Sputtering Chamber 13]

[0133] refer to Figure 8 The configuration of the sputtering chamber 13 will be described. In addition, in Figure 8 , for the previously described image 3 The same components are assigned the same reference numerals.

[0134] Such as Figure 8 As shown, the cathode device 18 includes a first unit 31 and a second unit 32 . The first unit 31 and the second unit 32 are arranged in order from the side closer to the first end Re1 of the formation region R1 in the scanning direction in a state of being arranged at the start position St. The first unit 31 and the second unit 32 each ...

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Abstract

The reactive sputtering device includes a cathode device (18), and the cathode device (18) radiates sputtered particles toward a compound film formation region (R1). The cathode device (18) is provided with: a scanning part (27), which scans the ablation area in the opposing area (R2); and a target (23), which is formed with the ablation area, and the length in the scanning direction is shorter than that of the opposing area (R2) . The scanning unit (27) scans the ablation region from the start position (St) toward the opposite region (R2), and at the start position (St), the sputtered particles in the two ends of the formation region (R1) in the scanning direction are first The distance (D1) between the reached first end (Re1) and the first end (23e1) of the target (23) is 150 mm or more in the scanning direction, and the first end (23e1) of the target (23) is in the scanning direction The upper side is closer to the first end (Re1) of the forming region.

Description

technical field [0001] The technology of the present disclosure relates to a reactive sputtering device for forming a compound film on a large substrate. Background technique [0002] Flat panel displays such as liquid crystal displays and organic EL displays include a plurality of thin film transistors that drive display elements. The thin film transistor has a channel layer, and the material for forming the channel layer is, for example, an oxide semiconductor such as indium gallium zinc oxide (IGZO). In recent years, the size of the substrate on which the channel layer is formed has increased. As a sputtering device for forming a film on a large substrate, for example, as described in Patent Document 1, a sputtering device in which a plurality of targets are arranged in one direction is used. . [0003] prior art literature [0004] patent documents [0005] Patent Document 1: JP-A-2009-41115 [0006] The region facing the substrate in the sputtering apparatus des...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34
CPCC23C14/08C23C14/3407C23C14/35C23C14/54H01J37/3408H01J37/3417H01J37/3455H01J37/347C23C14/0036C23C14/34C23C14/3464C23C14/568C23F4/00
Inventor 武井応树矶部辰德清田淳也大野哲宏佐藤重光
Owner ULVAC INC