A kind of preparation method of red and yellow light emitting diode epitaxial wafer and chip

Abstract

The invention discloses a light emitting diode epitaxial wafer capable of emitting red and yellow lights and a preparation method for a light emitting diode chip, and belongs to the technical field of a semiconductor. The light emitting diode epitaxial wafer comprises a P type substrate, and a P type buffer layer, a P type sacrificial layer, P type ohmic contact layer, a P type highly-doped layer, a P type current expanding layer, a P type limiting layer, a multiple-quantum-well layer, an N type limiting layer, an N type current expanding layer and an N type highly-doped layer that are stacked on the P type substrate in sequence, wherein the P type substrate is a GaAs substrate; the P type buffer layer is a GaAs layer; the P type sacrificial layer is a GaInP layer; and the P type ohmic contact layer is a GaAs layer. According to the light emitting diode epitaxial wafer, the P type buffer layer, the P type sacrificial layer, the P type ohmic contact layer and the like are stacked on the P type substrate in sequence, so that a red / yellow light LED chip with the P surface upwards can be obtained by one-time epitaxial layer transfer; integration with a blue / green light LED chip adopting a perpendicular structure can be realized; and the light emitting diode epitaxial wafer is high in product yield and low in production cost.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing red and yellow light-emitting diode epitaxial wafers and chips. Background technique [0002] Red and yellow high-brightness AlGaInP-based light-emitting diodes (Light Emitting Diode, referred to as LEDs) have the advantages of small size, long life, and low power consumption. Broad application prospects. [0003] AlGaInP LED epitaxial wafer includes N-type substrate, N-type buffer layer, N-type sacrificial layer, N-type ohmic contact layer, N-type current spreading layer, N-type confinement layer, multiple quantum well layer, P-type confinement layer from bottom to top , P-type transition layer, P-type current spreading layer, P-type ohmic contact layer, N-type substrate is a GaAs substrate, P-type current spreading layer and P-type ohmic contact layer are GaP layers. [0004] In the process of realizing the present invention, the inventor finds t...

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Problems solved by technology

[0005] The GaAs substrate will absorb the light emitted by the epitaxial wafer, so the P-type ohmic contact layer is usually bonded to the Si or sapphire substrate, and the GaAs substrate is removed, that is, the epitaxial layer (including N-type buffer layer, N-type sacrificial layer, etc.) , N-type ohmic contact layer, N-type current spreading layer, N-type confinement layer, multi-quantum well layer, P-type confinement layer, P-type transition layer, P-type current spreading layer, P-type ohmic contact layer) transfer, thus epitaxial The N-side of the chip obtained from the chip is facing up, which does not match the blue-green LED chip of the vertical structure.

If red-yellow LED chips and blue-green LED chips are integrated, it is necessary to transfer the epitaxial layer of the red-yellow LED chip with the N side up to realize the P side up, but the second transfer of the epitaxial layer will reduce the Product yield and increased production costs

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