All-inorganic quantum dot light emitting diode and preparation method therefor

Abstract

The invention discloses an all-inorganic quantum dot light emitting diode and a preparation method therefor. The all-inorganic quantum dot light emitting diode comprises a substrate, a bottom electrode, a hole functional layer, a core-shell structured quantum dot light emitting layer, a first electron transfer layer and a top electrode in sequence, wherein the hole functional layer and the first electron transfer layer are both made from an inorganic semiconductor material; the hole functional layer comprises a hole injection layer and a first hole transport layer; a second hole transport layer is inserted between the hole functional layer and the core-shell structured quantum dot light emitting layer, and / or a second electron transfer layer is inserted between the first electron transfer layer and the core-shell structured quantum dot light emitting layer; and the materials of the second hole transport layer and the second electron transfer layer are the same as the shell layer material of the core-shell structured quantum dot light emitting layer. According to the all-inorganic quantum dot light emitting diode and the preparation method therefor, the injection and transport efficiency of electrons or holes in a device is improved, the concentrations of the electrons or holes in the quantum dot light emitting layer are balanced, and the efficiency of the device is improved.

Description

technical field [0001] The invention relates to the field of quantum dot light-emitting materials, in particular to an all-inorganic quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diode devices (QLEDs) based on semiconductor quantum dots (QDs) have the advantages of high luminous efficiency, high color purity, and simple tunable color. In recent years, the development of quantum dot materials and QLED devices has received more and more attention. Compared with organic light-emitting diode devices, the light-emitting layer in QLED devices is composed of inorganic nanoparticles, and its stability is much higher than that of organic light-emitting materials. In the currently popular high-efficiency quantum dot light-emitting diode devices, organic injection and transport materials are still used, and the stability of quantum dot devices will also be affected by these organic materials. Therefore, the...

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Problems solved by technology

[0004] In view of the above deficiencies in the prior art, the object of the present invention is to provide an all-inorganic quantum dot light-emitting diode and its preparation method, aiming to solve the problem of low efficiency of the existing all-inorganic QLED devices

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