Method for producing silicon carbide (SiC) ceramics by polysilicon wire-electrode cutting scraps
A technology for silicon carbide ceramics and cutting waste, applied in the field of preparing silicon carbide ceramics, can solve problems such as lack of utilization value, and achieve the effects of reducing production cost and simple preparation process
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[0009] Specific embodiment: After mixing the silicon carbide and the cutting waste at a mass ratio of 1:9, the mixture is put into a resin ball milling tank for ball milling, and the ball milling time is 15 minutes. After the mixture is granulated and aged through a 40-mesh screen, it is placed in a mold at a pressure of 10Mpa, and then placed in a vacuum furnace for firing. The firing process is as follows: heat up to 300°C at 2°C / min The temperature is kept for 30 minutes, then the temperature is raised to 1420°C at 3°C / min and the temperature is kept for 10 minutes, and finally the temperature is lowered to 1000°C at 5°C / min, and then the electric furnace is turned off to cool down naturally to the chamber to obtain silicon carbide ceramics.
[0010] The method uses polysilicon wire cutting waste as a raw material, the preparation process is simple, and the production cost is reduced.
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