Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for producing silicon carbide (SiC) ceramics by polysilicon wire-electrode cutting scraps

A technology for silicon carbide ceramics and cutting waste, applied in the field of preparing silicon carbide ceramics, can solve problems such as lack of utilization value, and achieve the effects of reducing production cost and simple preparation process

Inactive Publication Date: 2016-05-11
SHAANXI JUJIEHAN CHEM CO LTD
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the residue after recycling the cutting slurry contains a large amount of silicon powder, silicon carbide abrasives that have not been separated thoroughly, and silicon carbide particles discarded due to lack of grinding ability. This part of the residue is often directly discarded as industrial waste due to lack of utilization value

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment

[0009] Specific embodiment: After mixing silicon carbide and cutting waste at a mass ratio of 1:9, put the mixture into a resin ball mill tank and mill the mixture for 15 minutes. Pass the mixture through a 40-mesh sieve for granulation and aging, then place it in a mold and shape it under a pressure of 10Mpa, and then put it into a vacuum furnace for firing. The firing process is as follows: heat up to 300°C at 2°C / min and Keep warm for 30 minutes, then raise the temperature to 1420°C at 3°C / min and hold it for 10 minutes, and finally cool down to 1000°C at 5°C / min, then turn off the power of the electric furnace and let it cool naturally to the room to obtain silicon carbide ceramics.

[0010] The method uses polysilicon wire cutting waste as raw material, has simple preparation process and reduces production cost.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for producing silicon carbide (SiC) ceramics by polysilicon wire-electrode cutting scraps and belongs to the field of production of functional materials, aiming to solve the problem that scraps are always discarded directly at present. The method includes adding SiC powder to a raw material, namely the polysilicon wire-electrode cutting scraps, and then sintering the mixture to obtain the SiC ceramics. As the polysilicon wire-electrode cutting scraps are taken as the raw material for producing the SiC ceramics, production process is simplified and production cost is lowered.

Description

technical field [0001] The invention belongs to the field of preparation of functional materials, and in particular relates to a method for preparing silicon carbide ceramics by using polysilicon wire cutting waste as a raw material. Background technique [0002] With the increasing investment of the international community in the solar photovoltaic industry, the production of polysilicon for solar energy has entered a period of rapid development. Data show that in recent years, the global solar-grade polysilicon has developed rapidly at an annual growth rate of 40% to 50%. my country is one of the fastest growing countries in the solar photovoltaic industry. According to statistics, 35 large-scale polysilicon projects were planned in 17 provinces and cities between 2007 and 2009. According to preliminary statistics, the production capacity has exceeded 55,000 tons. It is estimated that by 2011, China's photovoltaic polysilicon The output will account for about 34% of the wo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C04B35/573
CPCC04B35/573C04B35/6261C04B35/63448C04B2235/428C04B2235/48C04B2235/6562C04B2235/6567C04B2235/6581
Inventor 李长英
Owner SHAANXI JUJIEHAN CHEM CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com