A double-sided growth inp five-junction solar cell

Abstract

The invention discloses a double-face-growing InP five-junction solar battery. The double-face-growing InP five-junction solar battery comprises a double-face-polished InP substrate. A (AlxGa1-x)yIn1-yP sub-battery, a AlzGa1-zAs sub-battery, a GamIn1-mP component gradient buffer layer, an InP sub-battery window layer and an InP sub-battery emitter region layer are arranged on the upper surface of the InP substrate. an InP sub-battery back field layer, a GaInAsP sub-battery and a GaInAs sub-battery are arranged on the lower surface of the InP substrate. The (AlxGa1-x)yIn1-yP sub-battery is connected with the AlzGa1-zAs sub-battery through a fourth tunnel junction, the GamIn1-mP component gradient buffer layer is connected with the InP sub-battery window layer through a third tunnel junction, the InP sub-battery back field layer is connected with the GaInAsP sub-battery through a second tunnel junction, the GaInAsP sub-battery is connected with the GaInAs sub-battery through a first tunnel junction.

Description

technical field [0001] The invention relates to the field of solar photovoltaic technology, in particular to a double-sided grown InP five-junction solar cell. Background technique [0002] With the continuous improvement of photoelectric conversion efficiency and the continuous reduction of manufacturing costs, III-V multi-junction solar cells are widely used in space power systems and ground concentrated photovoltaic power generation systems. At present, the mainstream product of III-V multi-junction solar cells is GaInP / Ga(In)As / Ge triple-junction solar cells, whose photoelectric conversion efficiency under the AM0 spectrum has reached 30%, but due to the Ga(In)As The large bandgap difference between the battery and the Ge sub-battery causes the short-circuit current of the Ge sub-battery to be twice as large as that of the above two-junction sub-battery. Due to the current limitation of the series structure, this structure causes a part of the spectrum to not be fully co...

AI Technical Summary

Problems solved by technology

Among them, the method of using the dilute nitrogen compound GaInAsN as the material of the 1.0eV sub-cell is to grow GaInAsN (1.0eV) sub-cell, GaInAs (1.4eV) sub-cell, AlGaInAs ( 1.7eV) sub-cells and AlGaInP (2.05eV) sub-cells to form a laminated battery structure, but the crystal quality of the GaInAsN epitaxial material grown by the current technical means is poor, which makes the performance of the 1.0eV sub-cells low, resulting in the stacked battery overall inefficiency

The semiconductor bonding technology involves two preparation methods, one is to reversely grow AlGaInP (2.05eV) sub-cells, AlGaInAs (1.7eV) sub-cells and GaInAs (1.4eV) sub-cells on GaAs substrates and InP substrates respectively. GaInAs (0.75eV) sub-cells and GaInAsP (1.05eV) sub-cells are grown forward on the bottom, and then these two sub-cells are bonded together to form a five-junction solar cell through a semiconductor bonding process; the other is a GaAs substrate On the bottom, AlGaInP (2.05eV) sub-cells, AlGaInAs (1.7eV) sub-cells, GaAs (1.42eV), GaInAs (1.0eV) and GaInAs (0.75eV) sub-cells are grown in reverse order, and then bonded to such as Si and other supporting substrates, and finally corrode the GaAs substrate to obtain a five-junction solar cell, but these methods involve semiconductor bonding technology, and the complex process will lead to an increase in the cost of the cell

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